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PDF IRGI4085PBF Data sheet ( Hoja de datos )

Número de pieza IRGI4085PBF
Descripción PDP TRENCH IGBT
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRGI4085PBF Hoja de datos, Descripción, Manual

PDP TRENCH IGBT
PD - 97285
IRGI4085PbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
VCE(ON) typ. @ IC = 28A
IRP max @ TC= 25°C
TJ max
330
1.21
210
150
C
V
V
A
°C
G
CE
G
E
n-channel
TO-220AB
Full-Pak
G
Gate
C
Collector
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current c
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case d
Max.
±30
28
15
210
38
15
0.30
-40 to + 150
300
10lbxin (1.1Nxm)
Typ.
–––
Max.
3.29
Units
V
A
W
W/°C
°C
N
Units
°C/W
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05/30/07

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IRGI4085PBF pdf
IRGI4085PbF
100000
10000
VGS = 0V, f = 1 MHZ
Cies = C ge + Cgd, C ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
1000
Cies
Coes
100
10
0
Cres
50 100 150
VCE, Collector-toEmitter-Voltage(V)
200
16
IC = 25A
14
VCES= 240V
12 VCES= 150V
10 VCES= 60V
8
6
4
2
0
0 20 40 60 80
Q G, Total Gate Charge (nC)
100
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
1
0.1
0.01
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
τ3 τ3
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
R4R4
τCτ
Ri (°C/W)
0.14521
0.39603
τi (sec)
0.000104
0.002547
τ4τ4 1.23063 0.171095
1.51959 2.615
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1 10 100
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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