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PDF IRGI4061DPBF Data sheet ( Hoja de datos )
| Número de pieza | IRGI4061DPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• 5µs SCSOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
PD - 97114
IRGI4061DPbF
C
G
E
n-channel
VCES = 600V
IC = 11A, TC = 100°C
tsc > 5µs, Tjmax = 150°C
VCE(on) typ. = 1.35V
C
G
Gate
CE
G
TO-220AB
Full-Pak
C
Collector
E
Emitter
Absolute Maximum Ratings
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
IF@TC=25°C
IF@TC=100°C
IFM
VGE
PD @ TC =25°C
PD @ TC =100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current c
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current d
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT e
Junction-to-Case - Diode e
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount e
Weight
1
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Max.
600
20
11
40
40
20
11
40
± 20
± 30
43
17
-55 to + 150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
—
—
—
—
—
Typ.
—
—
0.5
—
2.0
Max.
2.90
4.60
—
65
—
Units
V
A
V
W
°C
Units
°C/W
g
www.irf.com
2/14/07
1 page  
700
600
500 EOFF
400
300
EON
200
100
0
0 4 8 12 16 20 24
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 1mH; VCE = 400V, RG = 22Ω; VGE = 15V.
500
EOFF
400
EON
300
200
100
1000
tdOFF
100
tF
tdON
10 tR
IRGI4061DPbF
1
0 4 8 12 16 20 24
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1mH; VCE= 400V
RG= 22Ω; VGE= 15V
1000
tdOFF
100
tdON
tR
tF
0
0 25 50 75 100 125
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 1mH; VCE = 400V, ICE = 11A; VGE = 15V
24
20 RG =10 Ω
16 RG =22 Ω
12 RG =47 Ω
8 RG = 100 Ω
4
0
0 4 8 12 16 20
IF (A)
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Fig. 17 - Typical Diode IRR vs. IF
TJ = 150°C
24
10
0
25 50 75 100 125
RG (Ω)
Fig. 16- Typ. Switching Time vs. RG
TJ = 150°C; L=1mH; VCE= 400V
ICE= 11A; VGE= 15V
24
20
16
12
8
4
0
25 50 75 100 125
RG (Ω)
Fig. 18 - Typical Diode IRR vs. RG
TJ = 150°C; IF = 11A
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRGI4061DPBF.PDF ] | |
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