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PDF IRGI4055PBF Data sheet ( Hoja de datos )

Número de pieza IRGI4055PBF
Descripción PDP TRENCH IGBT
Fabricantes International Rectifier 
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No Preview Available ! IRGI4055PBF Hoja de datos, Descripción, Manual

PDP TRENCH IGBT
PD - 97186
IRGI4055PbF
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
circuits in PDP applications
l Low VCE(on) and Energy per Pulse (EPULSETM)
for improved panel efficiency
l High repetitive peak current capability
l Lead Free package
Key Parameters
VCE min
VCE(ON) typ. @ 36A
300
1.10
IRP max @ TC= 25°C c
TJ max
220
150
C
V
V
A
°C
G
E
n-channel
G
Gate
C
Collector
CE
G
TO-220AB
Full-Pak
E
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
cRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
dRθJC
Junction-to-Case
Max.
±30
36
18
220
46
19
0.37
-40 to + 150
300
x x10lb in (1.1N m)
Typ.
–––
Max.
2.7
Units
V
A
W
W/°C
°C
N
Units
°C/W
www.irf.com
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1
02/17/06

1 page




IRGI4055PBF pdf
IRGI4055PbF
100000
10000
VGS = 0V, f = 1 MHZ
Cies = C ge + Cgd, C ce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
16
14 IC = 30A
12 IC = 36A
10
1000
8
100
Coes
Cres
6
4
2
10
0
50 100 150 200
VCE, Collector-toEmitter-Voltage(V)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
0
0 25 50 75 100 125 150
Q G, Total Gate Charge (nC)
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
1
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
τJ τJ
τ1 τ1
R1R1
CiC= iτiRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 0.2933 0.00049
τ3τ3 1.1021 0.190978
1.3046 2.786
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
10 100
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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