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Número de pieza | IRF7705GPBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile ( < 1.2mm)
l Available in Tape & Reel
l Lead-Free
l Halogen-Free
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for use in battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
PD- 96142A
IRF7705GPbF
VDSS
-30V
HEXFET® Power MOSFET
RDS(on) max (mW)
18 @VGS = -10V
30 @VGS = -4.5V
ID
-8.0A
-6.0A
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TSSOP-8
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-8.0
-6.0
-30
1.5
0.96
0.012
± 20
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient
Max.
83
Units
°C/W
1
05/14/09
www.DataSheet.in
1 page IRF7705GPbF
8.0
6.0
4.0
2.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
VDS
VGS
RG
RD
D.U.T.
-
+ VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
Fig 9. Maximum Drain Current Vs.
Case Temperature
90%
VDS
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10 0.10
0.05
0.02
1 0.01
0.1
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.01
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ= P DM x Z thJA + TA
0.1 1 10
t1, Rectangular Pulse Duration (sec)
100
1000
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRF7705GPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF7705GPBF | Power MOSFET ( Transistor ) | International Rectifier |
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