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PDF IRAM136-3023B Data sheet ( Hoja de datos )
| Número de pieza | IRAM136-3023B | |
| Descripción | Integrated Power Hybrid IC | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD-97270 RevA
IRAM136-3023B
Series
Integrated Power Hybrid IC for
Low Voltage Motor Applications
30A, 150V
with Internal Shunt Resistor
Description
International Rectifier's IRAM136-3023B is a 30A, 150V Integrated Power Hybrid IC with Internal Shunt
Resistor for low voltage Motor Drives applications such as electric vehicles, portable power tools and light
industrial applications. IR's technology offers an extremely compact, high performance AC motor-driver in a
single isolated package to simplify design.
This advanced HIC is a combination of IR's low RDS(on) Advance Planar MOSFET Super Rugged technology
and the industry benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced
package. A built-in temperature monitor and over-current and over-temperature protections and integrated
under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a new
developed single in line package (SiP3) with heat spreader for the power die along with full transfer mold
structure minimizes PCB space and resolves isolation problems to heatsink.
Features
• Integrated Gate Drivers
• Temperature Monitor and Protection
• Overcurrent shutdown
• Low RDS(on) Advance Planar Super Rugged Technology
• Undervoltage lockout for all channels
• Matched propagation delay for all channels
• 5V Schmitt-triggered input logic
• Cross-conduction prevention logic
• Lower di/dt gate driver for better noise immunity
• Motor Power up to 4.0kW / 48~100 Vdc
• Fully Isolated Package, Isolation 2000VRMS min
Absolute Maximum Ratings
Parameter
Description
Value
Units
VBR(DSS)
V+
MOSFET Blocking Voltage
Positive Bus Input Voltage
150
V
100
IO @ TC=25°C
RMS Phase Current (Note 1)
30
IO @ TC=100°C
RMS Phase Current (Note 1)
15 A
IO Pulsed RMS Phase Current (Note 1 and 2)
56
FPWM
PWM Carrier Frequency
20 kHz
PD
Power Dissipation per MOSFET @ TC =25°C
89 W
VISO Isolation Voltage (1min)
2000
VRMS
TJ (MOSFET & IC)
Maximum Operating Junction Temperature
+150
TC Operating Case Temperature Range
-20 to +100
°C
TSTG Storage Temperature Range
-40 to +125
T Mounting Torque (M4 screw)
0.7 to 1.17
Nm
Note 1: Sinusoidal modulation at V+=100V, TJ=150°C, FPWM=20kHz, modulation depth=0.8, pf=0.6, see Figure 3
Note 2: tP<100ms; TC=25°C; FPWM=20kHz, limited by IBUS-TRIP, see Table "Inverter Section Electrical Characteristics"
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IRAM136-3023B
Static Electrical Characteristics Driver Function @ TJ= 25°C
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are
applicable to all six channels (Static Electrical Characteristics are Based on Driver IC Data Sheet, Note 5).
Symbol
Definition
Min Typ Max Units
VIH Logic "0" input voltage
VIL Logic "1" input voltage
3.0 --- ---
--- --- 0.8
V
V
VCCUV+, VBSUV+ VCC and VBS supply undervoltage positive going threshold
8.0 8.9 9.8
V
VCCUV-, VBSUV- VCC and VBS supply undervoltage negative going threshold
7.4 8.2 9.0
V
VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis
0.3 0.7 ---
V
VIN,Clamp
IQBS
Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10μA
Quiescent VBS supply current VIN=0V
4.9 5.2 5.5
V
--- --- 165 μA
IQCC Quiescent VCC supply current VIN=0V
ILK Offset Supply Leakage Current
--- --- 3.35 mA
--- --- 60 μA
IIN+ Input bias current VIN=5V
IIN- Input bias current VIN=0V
--- 200 300 μA
--- 100 220 μA
ITRIP+
ITRIP bias current VITRIP=5V
--- 30 100 μA
ITRIP-
ITRIP bias current VITRIP=0V
--- 0
1 μA
V(ITRIP)
ITRIP threshold Voltage
440 490 540 mV
V(ITRIP,HYS)
ITRIP Input Hysteresis
--- 70 --- mV
Dynamic Electrical Characteristics @ TJ= 25°C
Symbol
Parameter
Min Typ Max
Input to Output propagation turn-
TON
on delay time (see fig.11)2/
--- 0.83 ---
Input to Output propagation turn-
TOFF
off delay time (see fig. 11)2/
--- 1.08 ---
TFLIN
Input Filter time (HIN, LIN)3/
100 200 ---
TBLT-Trip
DT
MT
TITrip
ITRIP Blancking Time3/
100 150 ---
Dead Time (VBS=VDD=15V)3/
220 290 360
Matching Propagation Delay Time
(On & Off)3/
--- 40 75
ITrip to six switch to turn-off
propagation delay (see fig. 2)4/
--- 3.2 ---
TFLT-CLR
Post ITrip to six switch to turn-off --- 7.7 ---
clear time (see fig. 2)4/
--- 6.7 ---
2/ Based on Characterization Data only. Not subject to production test.
3/ Based on Driver IC Data Sheet.
4/ Verified by Design. Not subject to production test.
Units Conditions
μs VCC=VBS= 15V, ID=30A,
V+=100V
μs
ns VIN=0 & VIN=5V
ns VIN=0 & VIN=5V
ns VBS=VCC=15V
ns VCC= VBS= 15V, external dead
time> 400ns
μs
VCC=VBS= 15V, ID=30A,
V+=100V
TC = 25°C
ms
TC = 100°C
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IRAM136-3023B
240
220
200
180
160
140
120
100
80
60 IOUT = 18A
40 IOUT = 15A
20 IOUT = 12A
0
0 2 4 6 8 10 12 14 16 18
PWM Sw itching Frequency - kHz
Figure 5. Total Power Losses vs. PWM Switching Frequency
Sinusoidal Modulation, V+=100V, TJ=150°C, Modulation Depth=0.8, PF=0.6
20
350
300
250
200
150
100
FPWM = 20kHz
FPWM = 16kHz
50 FPWM = 12kHz
0
0 2 4 6 8 10 12 14 16 18 20 22
Output Phase Current - ARMS
Figure 6. Total Power Losses vs. Output Phase Current
Sinusoidal Modulation, V+=100V, TJ=150°C, Modulation Depth=0.8, PF=0.6
24
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| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet IRAM136-3023B.PDF ] | |
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