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PDF IRAM109-015SD Data sheet ( Hoja de datos )
| Número de pieza | IRAM109-015SD | |
| Descripción | Integrated Power Hybrid IC | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Integrated Power Hybrid IC for
Appliance Motor Drive Applications
PD-97276 Rev A
IRAM109-015SD
Series
H-Bridge 1A, 500V
Description
International Rectifier’s IRAM109-015SD is a multi-chip Hybrid IC developed for low power appliance motor
control applications such as Fans, Pumps, refrigerator compressors, etc. The compact Single in line (SIP-S)
package minimizes PCB space.
Several built-in protection features such as temperature feedback, shoot through prevention, under voltage
lockout, and shutdown input makes this a very robust solution. The internal shunt resistor saves board
space and provides clean current feedback. The combination of highly efficient high voltage MOSFETs, the
industry benchmark Half-Bridge HVIC driver (3.3V/5V input compatible) and thermally enhanced package
makes this a highly competitive solution.
The bootstrapped power supplies for the high side drivers can be generated using internal bootstrap diodes
eliminating the need for isolated power supplies. This feature reduces the component count, board space,
and cost of the system.
Features
• Motor Power range 60~250W / 85~253 Vac.
• Integrated Gate Drivers and Bootstrap Diodes.
• Shut-Down input turns off both channels.
• Under-voltage lockout for all switches.
• Matched propagation delay.
• Schmitt-triggered input logic.
• Cross-conduction prevention logic.
• Low di/dt switching for better noise immunity.
• Internal Current Shunt.
• Internal thermistor for temperature feedback.
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM.
VDSS MOSFET Blocking Voltage
500 V
Vbus
Positive DC Bus Input Voltage
400 V
Io @ TC=25°C
RMS Phase Current
2.0
Io @ TC=100°C
RMS Phase Current (Note 1)
1.0 A
Ipk @ TC=25°C
Pd
Maximum Peak Phase Current (tp<100µs)
Maximum Power dissipation per FET @ TC =25°C
5.0
18
W
TJ (MOSFET & IC)
TC
Maximum Operating Junction Temperature
Operating Case Temperature Range
+150
-20 to +100
°C
TSTG Storage Temperature Range
-40 to +125
T Mounting torque Range (M3 screw)
0.6 Nm
Note 1: Sinusoidal Modulation at V+=360V, TJ=150°C, FPWM=20kHz, FMOD=50Hz, MI=0.8, PF=0.6, See Figure 5.
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IRAM109-015SD
Thermal and Mechanical Characteristics
Symbol
Parameter
Min Typ
Rth(J-C)
Thermal resistance, per FET
--- 5.1
Max Units Conditions
6.9 °C/W Flat, Insulation Material
Internal NTC - Thermistor Characteristics
Parameter Definition
Min Typ
R25 Resistance
R125 Resistance
97
2.25
100
2.52
B B-constant (25-50°C) 4165 4250
Temperature Range
-40 ---
Typ. Dissipation constant
--- 1.0
Max Units Conditions
103
2.80
4335
125
kƻ TC = 25°C
kƻ TC = 125°C
k R2 = R1e [B(1/T2 - 1/T1)]
°C
--- mW/°C TC = 25°C
Input-Output Logic Level Table
SD IN1,2 VS1,2
1 1 V+
100
0 x Off
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5 Page 
IRAM109-015SD
150
125 TC is limited to 100ºC
100
75
FPWM = 12kHz
50
FPWM = 16kHz
FPWM = 20kHz
25
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
Output Phase Current - ARMS
Figure 9. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
Sinusoidal Modulation, V+=360V, TJ=150°C, Modulation Depth=0.8, PF=0.6
160
TJ avg = 1.27 x TTherm + 3.09
150
140
130
120
110
100
90
80
70
70
115.8
75 80 85 90 95 100 105 110 115
Internal Therm istor Tem perature Equivalent Read Out - °C
120
Figure 10. Estimated Maximum MOSFET Junction Temperature vs. Thermistor Temperature
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| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IRAM109-015SD.PDF ] | |
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