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Número de pieza | RJE0603JPE | |
Descripción | Silicon P Channel MOS FET Series Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJE0603JPE (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Preliminary Datasheet
RJE0603JPE
Silicon P Channel MOS FET Series
Power Switching
REJ03G1907-0100
Rev.1.00
Apr 01, 2010
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
High endurance capability against to the short circuit.
Built-in the over temperature shut-down circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
D
123
Current
G
Gate Resistor
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
1. Gate
2. Drain
3. Source
4. Drain
S
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
VGSS
ID
IDR
IAP Note 1
EAR Note 2
Pch Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg 50
3. It provides by the current limitation lower bound value.
Ratings
–60
–16
2.5
–50 Note3
–50
–15
964
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
C
C
REJ03G1907-0100 Rev.1.00
Apr 01, 2010
www.DataSheet.in
Page 1 of 6
1 page RJE0603JPE
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120 ID = −5 A
100
0
−2 −4 −6 −8 −10
Gate to Source Voltage VGS (V)
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.3 0.5
0.2
0.1
0.1
0.03
0.02
0.01
1shot
pulse
0.01
10 μ
100 μ
θch- c(t) = γ s (t) • θch- c
θch- c = 1.25°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T.
Vout
Monitor
RL
Vin 50 Ω
–10 V
VDD
= –30 V
Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
tf
REJ03G1907-0100 Rev.1.00
Apr 01, 2010
www.DataSheet.in
Page 5 of 6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJE0603JPE.PDF ] |
Número de pieza | Descripción | Fabricantes |
RJE0603JPE | Silicon P Channel MOS FET Series Power Switching | Renesas Technology |
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