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PDF IRF7854PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7854PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97172
IRF7854PbF
Applications
HEXFET® Power MOSFET
l Primary Side Switch in Bridge or two-
switch forward topologies using 48V
(±10%) or 36V to 60V ETSI range inputs.
VDSS
RDS(on) max
80V 13.4m:@VGS = 10V
ID
10A
l Secondary Side Synchronous
Rectification Switch for 12Vout
l Suitable for 48V Non-Isolated
Synchronous Buck DC-DC Applications S 1
S2
AA
8D
7D
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
S
G
l Fully Characterized Capacitance Including
36
45
Top View
D
D
SO-8
Effective COSS to Simplify Design,
(See App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
dv/dt
TJ
TSTG
Linear Derating Factor
hPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
RθJL Junction-to-Drain Lead
eiRθJA Junction-to-Ambient (PCB Mount)
Max.
80
± 20
10
7.9
79
2.5
0.02
11
-55 to + 150
Units
V
A
W
W/°C
V/ns
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes through are on page 8
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IRF7854PbF
10
8
6
4
2
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
τJ τJ
τ1 τ1
R1R1
CiC= iτ=i/τRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τι (sec)
τAτ 4.329
0.003565
τ3τ3 30.099
1.1249
15.590 34.5
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.1 1 10 100 1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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| PDF Descargar | [ Datasheet IRF7854PBF.PDF ] | |
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