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PDF IRF7853PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7853PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97069
IRF7853PbF
HEXFET® Power MOSFET
Applications
l Primary Side Switch in Bridge Topology
in Universal Input (36-75Vin) Isolated
DC-DC Converters
VDSS
RDS(on) max
ID
100V 18m:@VGS = 10V 8.3A
l Primary Side Switch in Push-Pull
Topology for 18-36Vin Isolated DC-DC
Converters
l Secondary Side Synchronous
S1
AA
8D
Rectification Switch for 15Vout
S2
7D
l Suitable for 48V Non-Isolated
Synchronous Buck DC-DC Applications
Benefits
S3
G4
6D
5D
l Low Gate to Drain Charge to Reduce
Switching Losses
Top View
SO-8
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
100
± 20
8.3
6.6
66
2.5
V
A
W
dv/dt
TJ
TSTG
Linear Derating Factor
hPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.02
5.1
-55 to + 150
W/°C
V/ns
°C
Thermal Resistance
Parameter
RθJL Junction-to-Drain Lead
eiRθJA Junction-to-Ambient (PCB Mount)
Notes through are on page 8
www.irf.com
Typ.
–––
–––
Max.
20
50
Units
°C/W
1
1/5/06
www.DataSheet.in
1 page  
IRF7853PbF
10
8
6
4
2
0
25
50 75 100 125
TC , CaseTemperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
150
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
τJ τJ
τ1 τ1
R1R1
CiC= iτi/τRi/iRi
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τACτ 7.016 0.00474
τ3τ3 26.95 0.04705
16.04 2.3619
0.01
0.001
1E-006
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
0.001
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthja + Ta
1 10 100 1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF7853PBF.PDF ] | |
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