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Número de pieza | TGS4302 | |
Descripción | High Power Ka-Band SPDT Switch | |
Fabricantes | TriQuint Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TGS4302 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! Advance Product Information
February 6, 2006
High Power Ka-Band SPDT Switch
TGS4302
Preliminary Data
VA = +5V, IA ≈ 0mA, VB = -5V, IB = 20mA
0 10
S21 S13
S11 S22
-1 0
-2 -10
-3 -20
-4
25
30 35 40 45
Frequency (GHz)
-30
50
Key Features and Performance
• 27 - 46 GHz Frequency Range
• > 33 dBm Input P1dB @ VC = 7.5V
• On Chip Biasing Resistors
• On Chip DC Blocks
• < 0.9 dB Typical Insertion Loss
• < 4ns Switching Speed
• AP640R2-00 Replacement
• VPIN Technology
• Chip Dimensions:
1.09 x 1.09 x 0.10 mm
(0.043 x 0.043 x 0.004 inches)
Primary Applications
• Ka-Band Transmit / Receive
• Point-to-Point Radio
• Point-to-Multipoint Radio
Description
The TriQuint TGS4302 is a GaAs single-
pole, double-throw (SPDT) PIN mono-
lithic switch designed to operate over the
Ka-Band frequency range. This switch
maintains a low insertion loss with high
power handling of 33dBm or greater
input P1dB at VC = 7.5V. These
advantages, along with the small size of
the chip, make the TGS4302 ideal for
use in communication and
transmit/receive applications.
Note: This device is early in the characterization process prior to finalizing all electrical and process specifications. Specifications are subject
to change without notice.
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
www.DataSheet.in
1 page Advance Product Information
February 6, 2006
TGS4302
Preliminary Data
IA = 0mA, VB = -5V, IB = 10mA, F = 30GHz
-0.6
-0.8
-1
-1.2
-1.4 +5V
+7.5V
-1.6 +10V
+15V
-1.8 +20V
-2
10 12 14 16 18 20 22 24 26 28 30 32 34 36
Pin (dBm)
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
www.DataSheet.in
5 Page Advance Product Information
February 6, 2006
TGS4302
Assembly Process Notes
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C.
(30 seconds maximum)
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum stage temperature is 200°C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
11
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
www.DataSheet.in
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet TGS4302.PDF ] |
Número de pieza | Descripción | Fabricantes |
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TGS4302 | High Power Ka-Band SPDT Switch | TriQuint Semiconductor |
TGS4304 | High Power Ka-Band Absorptive SPDT Switch | TriQuint Semiconductor |
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