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PDF FDZ3N513ZT Data sheet ( Hoja de datos )
| Número de pieza | FDZ3N513ZT | |
| Descripción | 30V Integrated NMOS And Schottky Diode | |
| Fabricantes | Fairchild Semiconductor | |
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DataSheet.in
FDZ3N513ZT
July 2010
Integrated NMOS and Schottky Diode
Features
General Description
Monolithic NMOS and Schottky Diode
Ultra-small form factor 1mm x 1mm WLCSP
Max rDS(on) = 462 mΩ at VGS = 4.5 V, ID = 0.3 A
Max rDS(on) = 520 mΩ at VGS = 3.2 V, ID = 0.3 A
HBM ESD protection level > 2000V (Note3)
RoHS Compliant
The FDZ3N513ZT is a monolithic NMOS/ Schottky combination
(FETky) and is designed and wired to function as a discontinu-
ous conduction mode (DCM) boost LED power train for mobile
LED backlighting applications.
Application
Boost Converter Power Train for single cell Li-ion LED
backlighting
D
SK
G
Pin 1
WL-CSP 3D Bumps Facing Up View
WL-CSP 3D Bumps Facing Down View
WL-CSP 1.0X1.0 Bumps Facing Up View
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
PD
ID
VRRM
IO
TJ, TSTG
ESD
NMOS Drain to Source Voltage
NMOS Gate to Source Voltage
Power Dissipation @ TA = 25°C
Maximum Continuous NMOS Drain Current
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Operating Junction and Storage Temperature
Electrostatic Discharge Protection
Thermal Characteristics
RθJA
RθJA
Thermal Resistance, Junction to Ambient - 1in2, 2oz. Copper
Thermal Resistance, Junction to Ambient - Minimum Pad
(Note 1a)
(Note 1a)
CDM
(Note 1a)
(Note 1b)
Ratings
30
-0.3/5.5
1
1.1
25
0.3
-55/125
2000
100
260
Units
V
V
W
A
V
A
°C
V
°C/W
°C/W
Package Marking and Ordering Information
Part Number
FDZ3N513ZT
Device Marking
Z3
Package
WL-CSP 1.0X1.0
Reel Size
7”
Tape Width
8mm
Quantity
5000 units
©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
1
www.fairchildsemi.com
1 page  
DataSheet.in
Typical Characteristics TJ = 25°C unless otherwise noted
1000
100
10
1
0.1
10-4
10-3
10-2
10-1
1
t, PULSE WIDTH (s)
10
Figure 13. Single Pulse Maximum Power Dissipation
SINGLE PULSE
RθJA = 260oC/W
TA = 25oC
100 1000
2
1
0.1
0.01
0.001
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 260 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (s)
100
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
©2010 Fairchild Semiconductor Corporation
FDZ3N513ZT Rev. C
5
www.fairchildsemi.com
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