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Número de pieza | PBSS4032NT | |
Descripción | 2.6A NPN low VCEsat (BISS) transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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PBSS4032NT
30 V, 2.6 A NPN low VCEsat (BISS) transistor
Rev. 01 — 18 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PT.
1.2 Features
Low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp ≤ 1 ms
IC = 2.5 A;
IB = 0.25 A
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 30 V
- - 2.6 A
- - 5A
[1] -
76 105 mΩ
1 page DataSheet.in
NXP Semiconductors
PBSS4032NT
30 V, 2.6 A NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab956
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab957
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4032NT_1
Product data sheet
Rev. 01 — 18 December 2009
© NXP B.V. 2009. All rights reserved.
5 of 14
5 Page DataSheet.in
NXP Semiconductors
11. Soldering
PBSS4032NT
30 V, 2.6 A NPN low VCEsat (BISS) transistor
3.3
2.9
1.9
3 1.7
2
0.7 0.6
(3×) (3×)
0.5
(3×)
0.6
(3×)
1
Fig 16. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot023_fr
1.4
(2×)
4.6 2.6
1.4
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
2.8
4.5 sot023_fw
Fig 17. Wave soldering footprint SOT23 (TO-236AB)
PBSS4032NT_1
Product data sheet
Rev. 01 — 18 December 2009
© NXP B.V. 2009. All rights reserved.
11 of 14
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet PBSS4032NT.PDF ] |
Número de pieza | Descripción | Fabricantes |
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PBSS4032NT | 2.6A NPN low VCEsat (BISS) transistor | NXP Semiconductors |
PBSS4032NX | 4.7 A NPN low VCEsat (BISS) transistor | NXP Semiconductors |
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