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PDF PBSS4032NT Data sheet ( Hoja de datos )

Número de pieza PBSS4032NT
Descripción 2.6A NPN low VCEsat (BISS) transistor
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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DataSheet.in
PBSS4032NT
30 V, 2.6 A NPN low VCEsat (BISS) transistor
Rev. 01 — 18 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PT.
1.2 Features
„ Low collector-emitter saturation voltage VCEsat
„ Optimized switching time
„ High collector current capability IC and ICM
„ High collector current gain (hFE) at high IC
„ High energy efficiency due to less heat generation
„ AEC-Q101 qualified
„ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
„ DC-to-DC conversion
„ Battery-driven devices
„ Power management
„ Charging circuits
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp 1 ms
IC = 2.5 A;
IB = 0.25 A
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 30 V
- - 2.6 A
- - 5A
[1] -
76 105 mΩ

1 page




PBSS4032NT pdf
DataSheet.in
NXP Semiconductors
PBSS4032NT
30 V, 2.6 A NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab956
101
105
104
103
102
101
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab957
101
105
104
103
102
101
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4032NT_1
Product data sheet
Rev. 01 — 18 December 2009
© NXP B.V. 2009. All rights reserved.
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PBSS4032NT arduino
DataSheet.in
NXP Semiconductors
11. Soldering
PBSS4032NT
30 V, 2.6 A NPN low VCEsat (BISS) transistor
3.3
2.9
1.9
3 1.7
2
0.7 0.6
(3×) (3×)
0.5
(3×)
0.6
(3×)
1
Fig 16. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot023_fr
1.4
(2×)
4.6 2.6
1.4
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
2.8
4.5 sot023_fw
Fig 17. Wave soldering footprint SOT23 (TO-236AB)
PBSS4032NT_1
Product data sheet
Rev. 01 — 18 December 2009
© NXP B.V. 2009. All rights reserved.
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