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PDF PBSS4032ND Data sheet ( Hoja de datos )
| Número de pieza | PBSS4032ND | |
| Descripción | 3.5A NPN low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
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DataSheet.in
PBSS4032ND
30 V, 3.5 A NPN low VCEsat (BISS) transistor
Rev. 01 — 30 January 2010
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PD.
1.2 Features
Low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp ≤ 1 ms
IC = 4 A;
IB = 400 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 30 V
- - 3.5 A
- - 6A
[1] -
50 75 mΩ
1 page  
DataSheet.in
NXP Semiconductors
PBSS4032ND
30 V, 3.5 A NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab933
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab934
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4032ND_1
Product data sheet
Rev. 01 — 30 January 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
DataSheet.in
NXP Semiconductors
11. Soldering
PBSS4032ND
30 V, 3.5 A NPN low VCEsat (BISS) transistor
3.45
1.95
0.95
3.3 2.825
0.95
0.45 0.55
(6×) (6×)
0.7
(6×)
0.8
(6×)
2.4
Fig 16. Reflow soldering footprint SOT457 (SC-74)
5.3
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot457_fr
1.475
5.05
1.475
1.5
(4×)
0.45
(2×)
1.45
(6×)
2.85
Fig 17. Wave soldering footprint SOT457 (SC-74)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot457_fw
PBSS4032ND_1
Product data sheet
Rev. 01 — 30 January 2010
© NXP B.V. 2010. All rights reserved.
11 of 14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PBSS4032ND.PDF ] | |
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