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PDF PBSS4041NT Data sheet ( Hoja de datos )
| Número de pieza | PBSS4041NT | |
| Descripción | 3.8A NPN low VCEsat (BISS) transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DataSheet.in
PBSS4041NT
60 V, 3.8 A NPN low VCEsat (BISS) transistor
Rev. 01 — 31 January 2010
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4041PT.
1.2 Features
Very low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
Conditions
collector-emitter voltage open base
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
tp ≤ 1 ms
IC = 3 A;
IB = 300 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
- - 60 V
- - 3.8 A
- - 8A
[1] -
46 66 mΩ
1 page  
DataSheet.in
NXP Semiconductors
PBSS4041NT
60 V, 3.8 A NPN low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab956
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aab957
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4041NT_1
Product data sheet
Rev. 01 — 31 January 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
DataSheet.in
NXP Semiconductors
11. Soldering
PBSS4041NT
60 V, 3.8 A NPN low VCEsat (BISS) transistor
3.3
2.9
1.9
3 1.7
2
0.7 0.6
(3×) (3×)
0.5
(3×)
0.6
(3×)
1
Fig 16. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot023_fr
1.4
(2×)
4.6 2.6
1.4
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
2.8
4.5 sot023_fw
Fig 17. Wave soldering footprint SOT23 (TO-236AB)
PBSS4041NT_1
Product data sheet
Rev. 01 — 31 January 2010
© NXP B.V. 2010. All rights reserved.
11 of 14
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PBSS4041NT.PDF ] | |
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