(PDF) 10LZ47 Datasheet

Número de pieza	10LZ47
Descripción	SM10LZ47
Fabricantes	Toshiba Semiconductor
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No Preview Available ! SM10LZ47 www.DataSheet4U.com TOSHIBA BI−DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM10LZ47 AC POWER CONTROL APPLICATIONS l Repetitive Peak Off−State Voltage : VDRM = 800V l R.M.S. On−State Current : IT (RMS) = 10A l High Commutation (dv / dt) l Isolation Voltage : VISOL = 1500V AC MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING Repetitive Peak Off−State Voltage R.M.S On−State Current (Full Sine Waveform) Peak One Cycle Surge On−State Current (Non−Repetitive) I2t Limit Value Critical Rate of Rise of On−State Current (Note) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) VDRM IT (RMS) ITSM I2t di / dt PGM PG (AV) VFGM IGM Tj Tstg VISOL 800 10 100 (50Hz) 110 (60Hz) 50 50 5 0.5 10 2 −40~125 −40~125 1500 Note: di / dt test condition VDRM = 0.5 × Rated, ITM ≤ 15A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0 UNIT V A A A2s A / µs W W V A °C °C V Unit: mm JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13−10H1A 1 2001-07-10 1 page

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PDF 10LZ47 Data sheet ( Hoja de datos )