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Número de pieza | K3403 | |
Descripción | MOSFET ( Transistor ) - 2SK3403 | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de K3403 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3403
Switching Regulator Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 0.29 Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.8 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V)
• Enhancement mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
450
450
±30
13
52
100
350
13
10
150
−55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
1.25 °C/W
83.3 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.46 mH, RG = 25 Ω,
IAR = 13 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1 2006-11-06
1 page 2SK3403
www.DataSheet4U.com
rth – tw
3
1
0.5 Duty = 0.5
0.3 0.2
0.1
0.1
0.05
0.05 0.02
0.03 0.01
0.01
10 μ
Single pulse
100 μ
1m
10 m
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.25°C/W
100 m
1
10
Pulse width tw (S)
Safe operating area
100
ID max (pulse) *
50
30
ID max
(continuous)
100 μs *
10 1 ms *
5
3
DC operation
1 Tc = 25°C
0.5
0.3
0.1
0.05
0.03
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
VDSS max
3 10 30 100 300
Drain-source voltage VDS (V)
1000
EAS – Tch
400
300
200
100
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 90 V, L = 3.46 mH
Wave form
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2006-11-06
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet K3403.PDF ] |
Número de pieza | Descripción | Fabricantes |
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