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PDF RF3196 Data sheet ( Hoja de datos )
| Número de pieza | RF3196 | |
| Descripción | QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
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RF3196www.DataSheet4U.com
QUAD-BAND GSM850/GSM900/DCS/PCS
POWER AMP MODULE
RoHS Compliant and Pb-Free Product
Package Style: Module, 6mm x6mm
Features
Reduced Current into Mis-
match
Ultra-Small 6mmx6mm
Package Size
Integrated VREG
Complete Power Control Solu-
tion
Automatic VBATT Tracking Cir-
cuit
No External Components or
Routing
Applications
3V Quad-Band GSM Hand-
sets
Commercial and Consumer
Systems
Portable Battery-Powered
Equipment
GSM850/EGSM900/DCS/PC
S Products
GPRS Class 8
Power StarTM Module
DCS/PCS
RFIN
1
BAND SELECT 2
TX ENABLE 3
VBATT 4
GND 5
VRAMP 6
GSM
RF IN
7
9
DCS/PCS
RFOUT
8
GSM
RFOUT
Functional Block Diagram
Product Description
The RF3196 is a high-power, high-efficiency power amplifier module with integrated
power control that provides over 50dB of control range. The device is a self-con-
tained 6mmx6mm module with 50Ω input and output terminals. The device is
designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS
handheld digital cellular equipment and other applications in the 824MHz to
849MHz, 880MHz to 915MHz, 1710MHz to 1785MHz and 1850MHz to 1910MHz
bands. The RF3196 incorporates RFMD’s latest VBATT tracking circuit, which moni-
tors battery voltage and prevents the power control loop from reaching saturation.
The RF3196 also has a power flattening circuit that reduces power variation and
max current draw into mismatch. The RF3196 requires no external routing or exter-
nal components, simplifying layout and reducing board space.
Ordering Information
RF3196
RF3196 SB
RF3196PCBA-41X
Quad-Band GSM850/GSM900/DCS/PCS Power Amp Module
Power Amp Module 5-Piece Sample Pack
Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
9GaAs HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
9GaAs pHEMT
Si CMOS
GaN HEMT
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A2 DS071207
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 16
1 page  
RF3196www.DataSheet4U.com
Parameter
Specification
Min. Typ. Max.
Overall (DCS Mode)
Operating Frequency Range
Maximum Output Power 1
Maximum Output Power 2
Total Efficiency
Input Power Range
Output Noise Power
32.0
30.0
45
0
1710 to 1785
51
+3
-85
+5
Forward Isolation 1
Forward Isolation 2
-40 -30
-25 -10
Second Harmonic
Third Harmonic
All Other
Non-Harmonic Spurious
Input Impedance
Input VSWR
Output Load VSWR Stability (Spuri-
ous Emissions)
Output Load VSWR Ruggedness
-15 -10
-30 -15
-36
50
2.5:1
-36
No damage or permanent
degradation to device
Output Load Impedance
Power Control VRAMP
Power Control Range
50
45 50
Transient Spectrum
-35
Notes:
VRAMP_RP=VRAMP set for 32dBm at nominal conditions.
-23
Unit
MHz
dBm
dBm
%
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Ω
dBm
Ω
Condition
Nominal conditions: Temp=25°C, VBATT=3.5V,
VRAMP=VRAMP_RP, PIN=3dBm,
Freq=1710MHz to 1785MHz,
12.5% Duty Cycle, pulse width=1154μs
Temp=+25°C, VBATT=3.5V, VRAMP=VRAMP_RP
Temp=+85°C, VBATT=3.0V, VRAMP< 2.1V
At POUT MAX, VBATT=3.5V, VRAMP=2.1V
Maximum output power guaranteed at mini-
mum drive level
RBW=100kHz, 1805MHz to 1880MHz, POUT
< 32dBm
TXEnable=Low, PIN=+5dBm
TXEnable=High, VRAMP=0.26V,
PIN = +5 dBm
VRAMP=0.26V to VRAMP_RP
VRAMP=0.26V to VRAMP_RP
VRAMP=0.26V to VRAMP_RP
VSWR=8:1; all phase angles
(VRAMP set for POUT<32dBm into 50Ω load;
load switched to VSWR=8:1; RBW=3MHz)
VSWR=10:1; all phase angles
(VRAMP set for POUT<32dBm into 50Ω load;
load switched to VSWR=10:1)
Load impedance presented at RF OUT pad
dB
dBm
VRAMP=0.26V to VRAMP_RP
VRAMP= VRAMP_RP
Rev A2 DS071207
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 16
5 Page 
RF3196www.DataSheet4U.com
Theory of Operation
Overview
Building on previous generations of PowerStar® modules, the RF3196 has integrated Power Control with additional features
such as VBATT tracking, and a power flattening circuit that reduces power and current variation into mismatch conditions.
Theory of Operation
The type of power control used in the RF3196 is a closed loop method that regulates the collector voltage of the amplifier while
the stages are held at a constant bias. As the required output power is decreased from full power down to minimum PCLs, the
collector voltage is also decreased. This process is repeatable and enables the user to implement a single point calibration,
thereby increasing production by saving valuable time in the factory. The basic circuit is shown below in Figure 1.
VBATT
VRAMP
3 dB BW
300 kHz
-
+
-
+
H(s)
Saturation
Detector
VCC
RF IN
RF OUT
Figure 1. Power Control Circuit
TX ENABLE
Output power does not vary due to supply voltage under normal operating conditions if VCC is sufficiently lower than VBATT. Reg-
ulating the collector voltage to the PA essentially eliminates voltage sensitivity. This covers most cases where the PA will be
operated. However, as the battery discharges and approaches its lower voltage range, the maximum output power from the PA
will also drop slightly. In this case it is important to decrease VRAMP to prevent the power control circuitry from inducing switch-
ing transients. These transients occur as a result of the control loop slowing down and not regulating power in accordance with
VRAMP..
In the RF3196, is a VBATT tracking circuit that reduces the level of VRAMP as the battery voltage decreases. The limiter is inte-
grated into the CMOS controller and requires no additional input from the user. In the circuit, a feedback loop is implemented
that compares VBATT to VCC and produces a correction so that VRAMP is decreased. This prevents the switch transistor from
being driven into saturation and inducing switching transients.
In addition to the VBATT tracking circuit, the RF3196 has an integrated power flattening circuit that reduces the amount of cur-
rent variation when a mismatch is presented to the output of the PA. When a mismatch is presented to the output of the PA, its
output impedance is varied and could present a load that will increase output power. As the output power increases, so does
current consumption. The current consumption can become very high if not monitored and limited. The power flattening circuit,
like the VBATT tracking circuit, is also integrated onto the CMOS controller and requires no input from the user.
Rev A2 DS071207
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet RF3196.PDF ] | |
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