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PDF RF3198 Data sheet ( Hoja de datos )

Número de pieza RF3198
Descripción DUAL-BAND GSM900/DCS POWER AMP MODULE
Fabricantes RF Micro Devices 
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RF3198www.DataSheet4U.com
DUAL-BAND GSM900/DCS
POWER AMP MODULE
Package Style: LFM, 48-Pin, 7mmx7mmx0.9mm
Features
„ Integrated VREG
„ Complete Power Control Solu-
tion
„ +35dBm GSM Output Power
at 3.5V
„ +33dBm DCS Output Power
at 3.5V
„ 60% GSM and 55% DCSEFF
„ 7mmx7mmx0.9mm Pack-
age Size
Applications
„ 3V Dual-Band GSM Handsets
„ Commercial and Consumer
Systems
„ Portable Battery-Powered
Equipment
„ EGSM900/DCS Products
„ GPRS Class 10 Compatible
„ Power StarTM Module
DCS IN 37
BAND SELECT 40
TX ENABLE 41
VBATT 42
VBATT 43
Fully Integrated
Power Control Circuit
VRAMP 45
GSM IN 48
31 DCS OUT
6 GSM OUT
Functional Block Diagram
Product Description
The RF3198 is a high-power, high-efficiency power amplifier module with
integrated power control. The device is a self-contained
7mmx7mmx0.9mm lead frame module (LFM) with 50Ω input and out-
put terminals. The power control function is also incorporated, eliminating
the need for directional couplers, detector diodes, power control ASICs
and other power control circuitry; this allows the module to be driven
directly from the DAC output. The device is designed for use as the final RF
amplifier in EGSM900 and DCS handheld digital cellular equipment and
other applications in the 880MHz to 915MHz and 1710MHz to 1785MHz
bands. On-board power control provides over 50dB of control range with
an analog voltage input; and, power down with a logic “low” for standby
operation.
Ordering Information
RF3198
RF3198 SB
RF3198PCBA-41X
Dual-Band GSM900/DCS Power Amp Module
Power Amp Module 5-Piece Sample Pack
Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
9GaAs HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
9GaAs pHEMT
Si CMOS
GaN HEMT
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A0 DS070801
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF3198 pdf
RF3198www.DataSheet4U.com
Pin Function Description
Interface Schematic
1 NC Internal circuit node. Do not externally connect.
2 VCC2 GSM Controlled voltage input to the GSM driver stage. This voltage is part of the
power control function for the module. This node must be connected to
VCC OUT. This pin should be externally decoupled.
VCC2
3 NC Internal circuit node. Do not externally connect.
4
GND
Internally connected to the package base.
5
GND
Internally connected to the package base.
6 GSM900 OUT RF output for the GSM band. This is a 50Ω output. The output matching
circuit and DC-block are internal to the package.
7
GND
Internally connected to the package base.
8 NC Internal circuit node. Do not externally connect.
9 NC Internal circuit node. Do not externally connect.
10 NC Internal circuit node. Do not externally connect.
11 NC Internal circuit node. Do not externally connect.
12 NC Internal circuit node. Do not externally connect.
13 NC No internal or external connection.
14 NC Internal circuit node. Do not externally connect.
15 NC Internal circuit node. Do not externally connect.
16 NC Internal circuit node. Do not externally connect.
17 NC Internal circuit node. Do not externally connect.
18 VCC3 GSM Controlled voltage input to the GSM output stage. This voltage is part of the
power control function for the module. This node must be connected to
VCC OUT. This pin should be externally decoupled.
VCC3
Output
Match
RF OUT
VCC3
19 VCC OUT Controlled voltage output to feed VCC2 and VCC3. This voltage is part of
the power control function for the module. It cannot be connected to any
pins other than VCC2 and VCC3.
20 VCC OUT Controlled voltage output to feed VCC2 and VCC3. This voltage is part of
the power control function for the module. It cannot be connected to any
pins other than VCC2 and VCC3.
21 VCC3 DCS Controlled voltage input to the DCS output stage. This voltage is part of the See pin 18.
power control function for the module. This node must be connected to
VCC OUT. This pin should be externally decoupled.
22 NC Internal circuit node. Do not externally connect.
23 NC Internal circuit node. Do not externally connect.
24 NC No internal or external connection.
25 NC Internal circuit node. Do not externally connect.
26 NC Internal circuit node. Do not externally connect.
27 NC Internal circuit node. Do not externally connect.
28 NC Internal circuit node. Do not externally connect.
29 NC Internal circuit node. Do not externally connect.
30
GND
Internally connected to the package base.
Rev A0 DS070801
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 16

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RF3198 arduino
RF3198www.DataSheet4U.com
Theory of Operation
Overview
The RF3198 is a dual-band EGSM900 and DCS1800 power amplifier module that incorporates an indirect closed loop method
of power control. This simplifies the phone design by eliminating the need for the complicated control loop design. The indirect
closed loop appears as an open loop to the user and can be driven directly from the DAC output in the baseband circuit.
Theory of Operation
The indirect closed loop is essentially a closed loop method of power control that is invisible to the user. Most power control
systems in GSM sense either forward power or collector/drain current. The RF3198 does not use a power detector. A high-
speed control loop is incorporated to regulate the collector voltage of the amplifier while the stage are held at a constant bias.
The VRAMP signal is multiplied by a factor of 2.65 and the collector voltage for the second and third stages are regulated to the
multiplied VRAMP voltage. The basic circuit is shown in the following diagram.
TX ENABLE
VRAMP
VBATT
H(s)
RF IN
RF OUT
TX ENABLE
By regulating the power, the stages are held in saturation across all power levels. As the required output power is decreased
from full power down to 0dBm, the collector voltage is also decreased. This regulation of output power is demonstrated in
Equation 1 where the relationship between collector voltage and output power is shown. Although load impedance affects out-
put power, supply fluctuations are the dominate mode of power variations. With the RF3198 regulating collector voltage, the
dominant mode of power fluctuations is eliminated.
PdBm
=
10 log
-(--2-------V----C----C----–-----V----S---A---T---)--2-
8 RLOAD 10–3
(Eq. 1)
There are several key factors to consider in the implementation of a transmitter solution for a mobile phone. Some of them are:
• Current draw and system efficiency
• Power variation due to Supply Voltage
• Power variation due to frequency
• Power variation due to temperature
• Input impedance variation
• Noise power
• Loop stability
• Loop bandwidth variations across power levels
• Burst timing and transient spectrum trade offs
• Harmonics
Rev A0 DS070801
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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