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PDF KC857T Data sheet ( Hoja de datos )
| Número de pieza | KC857T | |
| Descripción | PNP General Purpose Transistor | |
| Fabricantes | Guangdong Kexin Industrial | |
| Logotipo |  |
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Transistors
PNP General Purpose Transistors
KC857T(BC857T)
Features
Low current (max. 100 mA)
Low voltage (max. 45 V).
SOT-523
1.6+0.1
-0.1
1.0+0.1
-0.1
0.2+0.05
-0.05
21
Unit: mm
0.1+0.01
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
power dissipation
Junction temperature
Storage temperature
3
0.5+0.1
-0.1
0.3+0.25
-0.05
Symbol
VCBO
VCEO
VEBO
IC
ICM
PD
Tj
Tstg
Rating
-50
-45
-5
-100
-200
150
150
-65 to +150
Unit
V
V
V
mA
mA
mW
1. Base
2. Emitter
3. Collecter
Electrical Characteristics Ta = 25
Parameter
collector cut-off current
emitter cut-off current
DC current gain
KC857AT
KC857BT
KC857CT
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
noise figure
transition frequency
* Pulse test: tp 300 ms;
Marking
NO.
Marking
KC857AT
3E
0.02.
KC857BT
3F
Symbol
Testconditons
Min Typ Max Unit
ICBO
IE = 0; VCB =- 30 V
IE = 0; VCB = -30 V; Tj = 150
-15 nA
-5 A
IEBO IC = 0; VEB = -5 V
-100 nA
125 250
hFE IC = -2 mA; VCE = -5 V
220 475
420 800
IC = -10 mA; IB = -0.5 mA
VCEsat
IC = -100 mA; IB =- 5 mA; *
-200 mV
-400 mV
IC = -2 mA; VCE = -5 V
VBE
IC = -10 mA; VCE = -5 V
-600
-750 mV
-820 mV
Cc IE = ie = 0; VCB = -10 V; f = 1 MHz
2.5 pF
Ce IC = ic = 0; VEB = -500 mV; f = 1 MHz
10 pF
F IC = -200 A; VCE = -5 V; RS = 2 k ;f =
1 kHz; B = 200 Hz
10 dB
fT IC = -10 mA; VCE = -5 V; f = 100 MHz 100
MHz
KC857CT
3G
www.kexin.com.cn 1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet KC857T.PDF ] | |
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