(PDF) KTS1C1S250 Datasheet - Mesh Overlay Power MOSFET

Número de pieza	KTS1C1S250
Descripción	Mesh Overlay Power MOSFET
Fabricantes	Kexin
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No Preview Available ! SMD Type Mesh Overlay Power MOSFET KTS1C1S250 www.DataSheet4U.com ICIC Features Typical RDS(on) (N-Channel)=0.9 Typical RDS(on) (N-Channel)=2.1 Gate-source zener diode Standard outline for easy automated surface mount assembly Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k ) Gate-to-Source Voltage Continuous Drain Current, @ Tc = 25 Continuous Drain Current, @ Tc = 100 Pulsed Drain Current Total Dissipation at TC = 25 Single Operation Total Dissipation at TC = 25 Dual Operation Junction and Storage Temperature Range Thermal Resistance Junction-ambient Max (Single Operating) (Dual Operating) * Mounted on 0.5 in²pad of 2oz. copper. Symbol VDS VDGR VGS ID ID IDM PTOT TJ, TSTG Rthj-amb * N-Channel P-Channel 250 250 250 250 25 0.75 0.60 0.47 0.38 3 2.4 1.6 2 -65 to 150 62.5 78 Unit V V A W /W www.kexin.com.cn 1 1 page

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PDF KTS1C1S250 Data sheet ( Hoja de datos )