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PDF IRLML0100TRPBF Data sheet ( Hoja de datos )

Número de pieza IRLML0100TRPBF
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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PD - 97157
IRLML0100TRPbF
HEXFET® Power MOSFET
VDS
VGS Max
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
100 V
± 16
V
220 m:
235 m:
G1
S2
3D
Micro3TM (SOT-23)
IRLML0100TRPbF
Application(s)
Load/ System Switch
Features and Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1
Benefits
results in
Multi-vendor compatibility
Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
TJ, TSTG
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJA
RθJA
Parameter
eJunction-to-Ambient
fJunction-to-Ambient (t<10s)
Max.
100
1.6
1.3
7.0
1.3
0.8
0.01
± 16
-55 to + 150
Typ.
–––
–––
Max.
100
99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes  through „ are on page 10
www.irf.com
Units
V
A
W
W/°C
V
°C
Units
°C/W
1
11/24/09

1 page




IRLML0100TRPBF pdf
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IRLML0100TRPbF
2.0 RD
VDS
1.5
VGS
RG
D.U.T.
+-VDD
1.0 VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.5 Fig 10a. Switching Time Test Circuit
0.0
25
50 75 100 125
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
150
1000
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10 0.10
0.05
0.02
1 0.01
0.1
0.01
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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