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Número de pieza | IRLML9303TRPBF | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRLML9303TRPBF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! VDS
VGS Max
RDS(on) max
(@VGS = -10V)
RDS(on) max
(@VGS = -4.5V)
-30
± 20
165
270
V
V
m
m
PD - 97519B
IRLML9303TRPbF
HEXFET® Power MOSFET
*
'
6 Micro3TM (SOT-23)
IRLML9303TRPbF
Application(s)
System/Load Switch
Features and Benefits
Features
Industry-standard pinout
Compatible with existing Surface Mount Techniques
RoHS compliant containing no lead, no bromide and no halogen
MSL1, Consumer qualification
Benefits
Multi-vendor compatibility
results in Easier manufacturing
Environmentally friendly
Increased reliability
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
PD @TA = 70°C
Maximum Power Dissipation
VGS
TJ, TSTG
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
Symbol
Parameter
eRJA Junction-to-Ambient
fRJA Junction-to-Ambient (t<10s)
Max.
-30
-2.3
-1.8
-12
1.25
0.80
0.01
± 20
-55 to + 150
Typ.
–––
–––
Max.
100
99
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 10
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Units
V
A
W
W/°C
V
°C
Units
°C/W
1
03/09/12
1 page 2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
TA , Ambient Temperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
150
1000
IRLML9303TRPbF
VDS
VGS
RG
-VGS
Pulse Width µs
Duty Factor
RD
D.U.T.
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10 0.10
0.05
0.02
1 0.01
0.1
0.01
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
1E-005
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRLML9303TRPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRLML9303TRPBF | HEXFET Power MOSFET | International Rectifier |
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