|
|
PDF BLS6G2731S-130 Data sheet ( Hoja de datos )
| Número de pieza | BLS6G2731S-130 | |
| Descripción | LDMOS S-band radar power transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BLS6G2731S-130 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
BLS6G2731S-130
LDMOS S-band radar power transistor
Rev. 01 — 26 July 2010
www.DataSheet4U.com
Objective data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz
range.
Table 1. Typical performance
Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Mode of operation
f
(GHz)
VDS PL
(V) (W)
Gp ηD
(dB) (%)
tr
(ns)
tf
(ns)
pulsed RF
2.7 to 3.1 32 130
12.5 47
20
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %:
Output power = 130 W
Power gain = 12.5 dB
Efficiency = 47 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2.7 GHz to 3.1 GHz)
Internally matched for ease of use
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency
range
1 page  
NXP Semiconductors
8. Package outline
Ceramic earless flanged cavity package; 2 leads
www.DataSheet4U.com
BLS6G2731S-130
LDMOS S-band radar power transistor
SOT922-1
A
L
H U2
D
F
3
D1 D
U1 c
1
E1 E
2
b w2 M D M
Q
0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
b
c
D D1 E E1 F H L Q U1 U2 w2
mm
4.22 12.42
3.53 12.17
0.15
0.10
17.58 17.50 9.53
17.22 17.25 9.27
9.27
9.02
1.32 15.62 3.05
0.81 14.34 2.03
1.70 17.75 9.53
1.45 17.50 9.27
0.25
inches
0.166
0.139
0.489
0.479
0.006
0.004
0.692 0.689 0.375 0.365 0.052 0.615
0.678 0.679 0.365 0.355 0.032 0.525
0.12
0.08
0.067
0.057
0.699
0.689
0.375
0.365
0.010
OUTLINE
VERSION
SOT922-1
IEC
REFERENCES
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
05-11-14
05-11-22
Fig 2. Package outline SOT922-1
BLS6G2731S-130
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 26 July 2010
© NXP B.V. 2010. All rights reserved.
5 of 9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BLS6G2731S-130.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BLS6G2731S-130 | LDMOS S-band radar power transistor | NXP Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |