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Número de pieza | CHE1260 | |
Descripción | 10-27GHz Bidirectionnal Detector | |
Fabricantes | United Monolithic Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CHE1260 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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CHE1260
RoHS COMPLIANT
10-27GHz Bidirectionnal Detector
GaAs Monolithic Microwave IC
Description
The CHE1260 is a bidirectionnal detector
that integrates a passive bidirectionnal
coupler, two matched detection diodes and
two reference diodes.
Vref_R DC_R Vdet_R
It allows the measurement of transmitted and
reflected power. It is designed for a wide
range of applications where an accurate
transmitted power control is required,
typically commercial communication
systems.
The circuit is manufactured with a Schottky
diode MMIC process, 1µm gate length, via
holes through the substrate and air bridges.
RF_in
Vdet_I DC_I Vref_I
RF_out
It is available in chip form.
10000
Incident power detection (mV)
Main Features
■ Wide frequency range 10-27GHz
■ Bidirectionnal detection
■ 30dB dynamic range
■ ESD protected
■ Chip size: 1.41 x 1.41 x 0.1 mm
■ BCB layer protection (see page 8)
Main Characteristics
1000
10GHz
22GHz
12GHz
27GHz
17GHz
100
10
-15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29
Incident power (dBm)
Tamb = +25°C, VDC = +4.5V (on DC_I and DC_R)
Symbol
Parameter
F Frequency range
IL Insertion Loss
Dr Dynamic Range
Min Typ Max Unit
10 27 GHz
0.8 dB
30 dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref : DSCHE1260-8058 - 28 Feb 08
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
1 page 10-27GHz Detector
CHE1260www.DataSheet4U.com
Incident power detection versus Incident power @ different frequencies
10000
(Vdetect_I)
1000
10GHz
22GHz
12GHz
27GHz
17GHz
100
10
-15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29
Incident power (dBm)
The CHE1260-98F is a bidirectionnal detector using a symmetrical bidirectionnal coupler.
Therefore the incident power detection versus incident power is identical to the reflective
power detection versus reflected power.
The reflective power detection versus incident power depends on both the coupler directivity
and the reflective environment of the chip.
Incident and reflective power detection versus Incident power @ 10GHz
10000
(Vdetect_I & Vdetect_R)
1000
100
Incident
Reflective
10
-15 -13 -11 -9 -7 -5 -3 -1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29
Incident power (dBm)
Ref: DSCHE1260-8058 - 28 Feb 08
5/8 Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet CHE1260.PDF ] |
Número de pieza | Descripción | Fabricantes |
CHE1260 | 10-27GHz Bidirectionnal Detector | United Monolithic Semiconductors |
CHE1260-QAG | 10-27GHz Bidirectionnal Detector | United Monolithic Semiconductors |
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