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PDF RE46C162 Data sheet ( Hoja de datos )

Número de pieza RE46C162
Descripción CMOS Ionization Smoke Detector ASIC
Fabricantes Microchip Technology 
Logotipo Microchip Technology Logotipo



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RE46C162/163
CMOS Ionization Smoke Detector ASIC with Interconnect,
Timer Mode and Alarm Memory
Features
• Pin Selectable Horn Patterns
• Alarm Memory
• Sensitivity Control Timer:
- 8 minute Timer for RE46C162
- 1 minute Timer for RE46C163
• >1500V ESD Protection (HBM) on All Pins
• Guard Outputs for Ion Detector Input
• ±0.75 pA Detect Input Current
• Internal Reverse Battery Protection
• Low Quiescent Current Consumption (<6.5 µA)
• I/O Filter and Charge Dump
• Internal Low Battery Detection
• Power-up Low Battery Test
• Interconnect up to 66 Detectors
• RoHS Compliant, Lead Free Packaging
Description
The RE46C162/163 devices are low-power, CMOS
ionization type, smoke detector ICs. With few external
components, these circuits will provide all the required
features for an ionization type smoke detector.
An internal oscillator strobes power to the smoke
detection circuitry for 10.5 ms every 1.67 seconds to
keep standby current to a minimum. A check for a low
battery condition is performed every 40 seconds when
in standby. The temporal horn pattern supports the
NFPA 72 emergency evacuation signal.
An interconnect pin allows multiple detectors to be
connected so when one unit alarms, all units will sound.
A charge dump feature will quickly discharge the inter-
connect line when exiting a local alarm. The intercon-
nect input is also digitally filtered.
An internal timer allows for a single button, push-to-test
to be used for a reduced sensitivity mode.
An alarm memory feature allows the user to determine
if the unit has previously entered a local alarm
condition.
Utilizing low-power CMOS technology, the
RE46C162/163 devices are designed for use in smoke
detectors that comply with Underwriters Laboratory
Specification UL217 and UL268.
Package Types
RE46C162/163
PDIP
TSTART 1
16
IO
TONE
TSTROBE
2
3
4
15
14
13
LED 5
12
VDD
RBIAS
6
7
11
10
FEED 8
9
GUARD2
DETECT
GUARD1
VSEN
OSCAP
HS
HB
VSS
2010 Microchip Technology Inc.
DS22245A-page 1

1 page




RE46C162 pdf
RE46C162/163
www.DataSheet4U.com
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
VDD....................................................................................15V
Input Voltage Range Except FEED, I/O ........... VIN=-.3V to VDD +.3V
FEED Input Voltage Range .................... VINFD = -10 to +22V
I/O Input Voltage Range................................VIO1 = -.3 to 15V
Reverse Battery Time ...............................................TRB = 5S
Input Current except FEED ................................... IIN = 10 mA
Operating Temperature ............................... TA = -10 to +60°C
Storage Temperature ............................TSTG = -55 to +125°C
Maximum Junction Temperature ......................... TJ = +150°C
† Notice: Stresses above those listed under “Maximum rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
DC ELECTRICAL CHARACTERISTICS
DC Electrical Characteristics: Unless otherwise indicated, all parameters apply at TA = +25°C, VDD = 9V,
OSCAP = .1 µF, RBIAS = 8.2 M, VSS = 0V
Parameter
Symbol
Test
Pin
Min
Typ
Max
Units
Conditions
Supply Voltage
Supply Current
VDD
IDD1
IDD2
6 6 — 12 V
6 — 5 6.5 µA
6 —— 9
µA
Input Voltage High
Input Voltage Low
Input Leakage Low
VIH1
3,8 6.2 4.5 —
V
VIH2
2 3 ——
V
VIH3
1 4.5 — —
V
VIL1 3,8 — 4.5 2.7
V
VIL2 2 — — 1
V
VIL3 1 — — 2.5 V
ILDET1
15
— -0.75 pA
ILDET2
15
— -1.50 pA
Input Leakage High
ILFD 8 — — -50 µA
ILTONE
3
— — -100 nA
IHDET1
15
— 0.75
pA
IHDET2
15
— 1.50
pA
IHFD
8 — — 50
µA
IIOL2
2 — — 150 µA
IHTONE
3
— — 100
nA
Output Off Leakage High
IIOHZ 4,5 — —
1
µA
Input Pull Down Current IPD1 1 20 50 80 µA
Output High Voltage
VOH1 10,11 6.3
V
Note 1: Sample test only.
2: Not 100% production tested.
3: Production test at room with temperature guard banded limits.
Operating
RBIAS = 8.2 MW, OSCAP = .1 µF
RBIAS = 8.2 MW, OSCAP = .1 µF;
VDD = 12V
Note 2
No local alarm, I/O as an input
Note 2
No local alarm, I/O as an input
VDD = 9V, DETECT = VSS,
0-40% RH
VDD = 9V, DETECT = VSS, 85%
RH Note 1
FEED = -10V
TONE = VSS
VDD = 9V, DETECT = VDD,
0-40% RH
VDD = 9V, DETECT = VDD,
85% RH Note 1
FEED = 22V
No alarm, VIO = 15V
TONE = VDD
Outputs off
TSTART = 9V
IOH = -16 mA, VDD = 7.2V
2010 Microchip Technology Inc.
DS22245A-page 5

5 Page





RE46C162 arduino
3.0 DEVICE DESCRIPTION
3.1 Internal Timing
With external components as indicated on the
application drawing, the period of the oscillator is
nominally 1.67 seconds in standby. Every
1.67 seconds, the detection circuitry is powered up for
10.5 ms and the status of the smoke comparator is
latched. In addition, every 40 seconds the LED driver is
turned on for 10.5 ms and the status of the low battery
comparator is latched. The smoke comparator status is
not checked during the low battery test, during the low
battery horn warning chirp, or when the horn is on due
to an alarm condition.
If an alarm condition is detected, the oscillator period
increases to 41.7 ms.
Due to the low current used in the oscillator, the
capacitor on the OSCAP pin should be a low leakage
type.
3.2 Smoke Detection Circuit
The smoke comparator compares the ionization
chamber voltage to a voltage derived from a resistor
divider across VDD. This divider voltage is available
externally on the VSEN pin. When smoke is detected,
this voltage is internally increased by 130 mV nominal
to provide hysteresis and make the detector less
sensitive to false triggering.
The VSEN pin can be used to modify the internal set
point for the smoke comparator by use of external
resistors to VDD or VSS. Nominal values for the internal
resistor divider are indicated on the block diagram.
These internal resistor values can vary by up to ±20%,
but the resistor matching should be <2% on any one
device. The transmission switch on VSEN prevents any
interaction from the external adjustment resistors.
The guard amplifier and outputs are always active and
will be within 50 mV of the DETECT input to reduce
surface leakage. The guard outputs also allow for
measurement of the DETECT input without loading the
ionization chamber.
3.3 Low Battery Detection
An internal reference is compared to the voltage-
divided VDD supply. The battery can be checked under
load via the LED low side driver output since low
battery status is latched at the end of the 10.5 ms LED
pulse.
3.4 LED Pulse
The LED is pulsed on for 10.5 ms every 40s in standby.
In alarm, the LED is pulsed on for 10.5 ms every
1 second.
RE46C162/163
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3.5 Interconnect
The I/O pin provides a capability common to many
detectors in a single system. If a single unit goes into
alarm, the I/O pin is driven high. This high signal
causes the interconnected units to alarm. The LED
flashes every 1s for 10.5 ms on the signaling unit and
is inhibited on the units that are in alarm due to the I/O
signal. An internal sink device on the I/O pin helps to
discharge the interconnect line. This charge dump
device is active for 1 clock cycle after the unit exits the
alarm condition (1.67s).
The interconnect input has a 500 ms nominal digital
filter. This allows for interconnection to other types of
alarms (carbon monoxide for example) that may have
a pulsed interconnect signal.
3.6 Testing
At power-up all internal registers are reset. The low
battery set point can be tested at power-up by holding
FEED and OSCAP low at power-up. HB will change
state as VDD passes through the low battery set point.
By holding the OSCAP pin low, the internal power
strobe is active. Functional testing can be accelerated
by driving OSCAP with a 4 kHz square wave; however,
the 10.5 ms strobe period must be maintained for
proper operation of the analog circuitry. Refer to
Figure 3-1 timing diagram.
3.7 Timer Mode
The transition of the TSTART pin from a high to low
level initiates a timer period (10 minutes maximum for
RE46C162, and 1 minute maximum for RE46C163).
During this timer period, the open drain NMOS on the
TSTROBE pin is strobed simultaneously with the inter-
nal clock. A resistor connected to this pin and the
VSEN pin is used to modify the detector sensitivity for
the timer period.
During the timer period, the LED flashes for 10.5 ms
every 10 seconds.
If the smoke level exceeds the reduced sensitivity set
point during the timer period, the unit will go into a local
alarm condition, the horn will sound and the timer mode
is cancelled. If an external only alarm occurs during the
timer mode, the timer mode is cancelled.
If the test button is pushed in a standby, reduced
sensitivity mode, the unit is tested normally. Upon
release of the test button, the timer mode counter is
reset and restarted.
2010 Microchip Technology Inc.
DS22245A-page 11

11 Page







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