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PDF ZXMS6004DT8 Data sheet ( Hoja de datos )
| Número de pieza | ZXMS6004DT8 | |
| Descripción | 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET | |
| Fabricantes | Diodes Incorporated | |
| Logotipo |  |
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A Product Line of
www.DataSheet4U.com
Diodes Incorporated
ZXMS6004DT8
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET™ MOSFET
SUMMARY
Continuous drain source voltage 60 V
On-state resistance
500 mΩ
Nominal load current (VIN = 5V) 1.2 A
Clamping Energy
210 mJ
DESCRIPTION
The ZXMS6004DT8 is a dual self protected low side MOSFET
with logic level input. It integrates over-temperature, over-
current, over-voltage (active clamp) and ESD protected logic level
functionality independently per channel. The ZXMS6004DT8 is
ideal as a general purpose switch driven from 3.3V or 5V
microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
SM8 Package
FEATURES
• Compact dual package
• Low input current
• Logic Level Input (3.3V and 5V)
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input Protection (ESD)
• High continuous current rating
ORDERING INFORMATION
DEVICE
PART
MARK
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY PER
REEL
ZXMS6004DT8TA
ZXMS
6004D
7
12 embossed
1,000 units
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
1 of 9
www.diodes.com
June 2010
© Diodes Incorporated
1 page  
A Product Line of
www.DataSheet4U.com
Diodes Incorporated
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN TYP MAX UNIT CONDITIONS
Static Characteristics
Drain-Source Clamp Voltage
Off state Drain Current
Off state Drain Current
Input Threshold Voltage
Input Current
Input Current
Input Current while over
temperature active
Static Drain-Source On-State
Resistance
VDS(AZ)
IDSS
IDSS
VIN(th)
IIN
IIN
RDS(on)
60 65 70
500
1
0.7 1
1.5
60 100
120 200
220
400 600
V ID=10mA
nA VDS=12V, VIN=0V
uA VDS=36V, VIN=0V
V VDS=VGS, ID=1mA
μA VIN=+3V
μA VIN=+5V
μA VIN=+5V
mΩ VIN=+3V, ID=0.5A
Static Drain-Source On-State
Resistance
RDS(on)
350 500
mΩ VIN=+5V, ID=0.5A
Continuous Drain Current (a)(e)
Continuous Drain Current (a)(e)
Continuous Drain Current (a)(d)
Continuous Drain Current (a)(d)
Current Limit (g)
Current Limit (g)
Dynamic Characteristics
Turn On Delay Time
Rise time
Turn Off Delay Time
Fall Time
ID
ID
ID
ID
ID(LIM)
ID(LIM)
td(on)
tr
td(off)
ff
0.9
1.0
1.1
1.2
0.7 1.7
1 2.2
5
10
45
15
A VIN=3V; TA=25°C
A VIN=5V; TA=25°C
A VIN=3V; TA=25°C
A VIN=5V; TA=25°C
A VIN=+3V,
A VIN=+5V
μs VDD=12V, ID=0.5A,
VGS=5V
μs
μs
μs
Notes:
(g) The drain current is restricted only when the device is in saturation (see graph ‘typical output
characteristic’). This allows the device to be used in the fully on state without interference from
the current limit. The device is fully protected at all drain currents, as the low power dissipation
generated outside saturation makes current limit unnecessary.
ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
5 of 9
www.diodes.com
June 2010
© Diodes Incorporated
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet ZXMS6004DT8.PDF ] | |
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