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Número de pieza | RFX10TF6S | |
Descripción | Super Fast Recovery Diode | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RFX10TF6S (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Super Fast Recovery Diode
RFX10TF6S
Series
Ultra Fast Recovery
Dimensions (Unit : mm)
+0.3
-0.1
Applications
General rectification
RFX10
TF6S
+0.3
-0.1
+0.2
-0.1
Features
1)Single type.(TO-220)
2)High switching speed
3)Soft Recovery
Construction
Silicon epitaxial planer
(1) (3)
+0.1
-0.05
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Structure
(1) (3)
Absolute maximum ratings (Tc=25C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
Forward current surge peak
Junction temperature
Storage temperature
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Conditions
Duty 0.5
Direct voltage
60Hz half sin wave, Resistance load, Tc=57C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
Limits
600
600
10
100
150
-55 to +150
Unit
V
V
A
A
C
C
Electrical characteristics (Tj=25C)
Parameter
Symbol
Forward voltage
Reverse current
Reverse recovery time
VF
IR
trr
Thermal Resistance
Rth(j-c)
Conditions
IF=10A
VR=600V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
Min. Typ. Max. Unit
- 2 2.5 V
- 0.15 10
A
- 16 30 ns
- - 3.5 C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.A
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet RFX10TF6S.PDF ] |
Número de pieza | Descripción | Fabricantes |
RFX10TF6S | Super Fast Recovery Diode | ROHM Semiconductor |
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