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Número de pieza | RFUS20TM6S | |
Descripción | Super Fast Recovery Diode | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RFUS20TM6S (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Super Fast Recovery Diode
RFUS20TM6S
Series
Ultra Fast Recovery
Dimensions(Unit : mm)
+0.3
-0.1
Applications
General rectification
+0.3
-0.1
+0.2
-0.1
Features
1)Cathode Common Single type.(TO-220)
2)Ultra High switching speed
Construction
Silicon epitaxial planar
(1) (2) (3)
+0.1
-0.05
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Structure
(1) (2) (3)
Absolute maximum ratings (Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
VRM
VR
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Conditions
Duty≦0.5
Direct voltage
60Hz half sin wave, Resistance load, Tc=50C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
Limits
600
600
20
100
150
-55 to 150
Unit
V
V
A
A
C
C
Electrical characteristics(Tj=25C)
Parameter
Symbol
Forward voltage
Reverse current
Reverse recovery time
VF
IR
trr
Thermal Resistance
Rth(j-c)
Conditions
IF=20A
VR=600V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
Min. Typ. Max. Unit
- 2.3 2.8 V
- 0.05 10 μA
-
23 35
ns
- - 1.8 C / W
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©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.A
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet RFUS20TM6S.PDF ] |
Número de pieza | Descripción | Fabricantes |
RFUS20TM6S | Super Fast Recovery Diode | ROHM Semiconductor |
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