(PDF) RB162VA-20 Datasheet - Schottky Barrier Diode

Número de pieza	RB162VA-20
Descripción	Schottky Barrier Diode
Fabricantes	ROHM Semiconductor
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No Preview Available ! www.DataSheet4U.com Schottky barrier Diode RB162VA-20 Applications General rectification Dimensions (Unit : mm) 0.17 +0.1 −0.05 Land size figure (Unit : mm) 1.1 Feature 1)Small mold type (TUMD2) 2)Low VF 3)High reliability Structure Silicon epitaxial planer 0.6 +0.2 −0.1 TUMD2 Structure Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak (60Hz/1cyc) Junction temperature IFSM Tj Storage temperature Tstg Limits 25 20 1.0 5.0 125 -40 to +125 Unit V V A A C C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Forward voltage Reverse current VF - 0.36 0.4 IR - 0.3 1.2 Unit Conditions V IF=1.0A mA VR=20V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.A 1 page

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PDF RB162VA-20 Data sheet ( Hoja de datos )