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PDF EM6K31 Data sheet ( Hoja de datos )

Número de pieza EM6K31
Descripción 2.5V Drive Nch Nch MOSFET
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



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No Preview Available ! EM6K31 Hoja de datos, Descripción, Manual

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2.5V Drive Nch + Nch MOSFET
EM6K31
Structure
Silicon N-channel MOSFET
Features
1) High speed switing.
2) Small package(EMT6).
3) Low voltage drive(2.5V drive).
Application
Switching
Dimensions (Unit : mm)
EMT6
(4) (5) (6)
(1) (2) (3)
Abbreviated symbol : K31
Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
EM6K31
Taping
T2R
8000
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
60
VGSS
20
ID
IDP *1
Is
Isp *1
250
1
125
1
PD *2
150
120
Tch 150
Tstg 55 to +150
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a recommended land.
Unit
V
V
mA
A
mA
A
mW / TOTAL
mW / ELEMENT
C
C
Inner circuit
(6) (5) (4)
1
2
2
1
(1) (2)
1 ESD PROTECTION DIODE
2 BODY DIODE
(3)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth (ch-a)*
* Each terminal mounted on a recommended land.
Limits
833
1042
Unit
°C / W /TOTAL
°C / W /ELEMENT
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.04 - Rev.A

1 page




EM6K31 pdf
EM6K31
Measurement circuits
VGS
RG
ID
RL
VDS
D.U.T.
VDD
Fig.1-1 Switching time measurement circuit
Data Sheet
www.DataSheet4U.com
Pulse width
50%
VGS 10%
VDS
10%
90% 50%
10%
td(on)
90%
tr
ton
td(off)
90%
tf
toff
Fig.1-2 Switching waveforms
Notice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
www.rohm.com
c 2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.04 - Rev.A

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