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Número de pieza | RJL5015DPK | |
Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
Fabricantes | Renesas Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RJL5015DPK (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! RJL5015DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
Built-in fast recovery diode
Low on-resistance
RDS(on) = 0.23 typ. (at ID = 11 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
Preliminary Datasheetwww.DataSheet4U.com
REJ03G1912-0100
Rev.1.00
May 27, 2010
1
2
3
D
G
S
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
ch-c
Tch
Tstg
Ratings
500
±30
22
66
22
66
7
2.7
150
0.833
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
REJ03G1912-0100 Rev.1.00
May 27, 2010
Page 1 of 6
1 page RJL5015DPK
3
Normalized Transient Thermal Impedance vs. Pulse Width
Preliminary
www.DataSheet4U.com
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03 0.02
0.01
0.01
10 μ
100 μ
θch – c (t) = γ s (t) • θch – c
θch – c = 0.833°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 250 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
REJ03G1912-0100 Rev.1.00
May 27, 2010
Page 5 of 6
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet RJL5015DPK.PDF ] |
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RJL5015DPK | Silicon N Channel MOS FET High Speed Power Switching | Renesas Technology |
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