(PDF) RJK6025DPE Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	RJK6025DPE
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! RJK6025DPE Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 13 Ω typ. (at ID =0.4 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) Pch Note2 θch-c Tch Tstg www.DataSheet4U.com REJ03G1870-0100 Rev.1.00 Dec 08, 2009 D 1. Gate 2. Drain 3. Source 4. Drain S Ratings 600 ±30 0.8 1.2 0.8 1.2 25 5 150 –55 to +150 (Ta = 25°C) Unit V V A A A A W °C/W °C °C REJ03G1870-0100 Rev.1.00 Dec 08, 2009 Page 1 of 3 1 page

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PDF RJK6025DPE Data sheet ( Hoja de datos )