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PDF RJK5014DPK Data sheet ( Hoja de datos )
| Número de pieza | RJK5014DPK | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
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RJK5014DPK
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
12 3
G
S
www.DataSheet4U.com
REJ03G1458-0200
Rev.2.00
Oct 20, 2009
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
500
±30
19
38
19
38
5
1.3
150
0.833
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1458-0200 Rev.2.00 Oct 20, 2009
Page 1 of 6
1 page  
RJK5014DPK
3
Normalized Transient Thermal Impedance vs. Pulse Width
www.DataSheet4U.com
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 μ 100 μ
θch – c (t) = γ s (t) • θch – c
θch – c = 0.833°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 250 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
REJ03G1458-0200 Rev.2.00 Oct 20, 2009
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK5014DPK.PDF ] | |
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