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PDF RJK5003DPD Data sheet ( Hoja de datos )
| Número de pieza | RJK5003DPD | |
| Descripción | Silicon N Channel Power MOS FET | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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RJK5003DPD
Silicon N Channel Power MOS FET
High Speed Power Switching Use
Features
• VDSS : 500 V
• RDS(on) : 1.5 Ω (MAX.)
• ID : 5 A
• Surface mount package (MP-3A)
Outline
RENESAS Package code: PRSS0004ZA-A
(Package name : MP-3A)
4
2, 4
12 3
1
3
www.DataSheet4U.com
REJ03G0580-0200
Rev.2.00
Mar 14, 2006
1. Gate
2. Drain
3. Source
4. Drain
Applications
• Lighting ballast, SMPS, etc.
Maximum Ratings
Parameter
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain Peak current
Avalanche current
VDSS
VGSS
ID
ID
Note1
(pulse)
IAP
Channel dissipation
Pch
Channel temperature
Tch
Storage temperature
Tstg
Channel to case thermal impedance
θch-c
Note: 1. Pulse width limited by safe operating area.
Ratings
500
±30
5
20
5
62.5
150
–55 to +150
2.0
Unit
V
V
A
A
A
W
°C
°C
°C/W
(Tc = 25°C)
Conditions
VGS = 0 V
VDS = 0 V
L = 200 µH
Channel to case
Rev.2.00, Mar 14, 2006, page 1 of 6
1 page  
RJK5003DPD
Static Drain to Source on State Resistance vs.
Channel Temperature (Typical)
101 VGS = 10 V
7 ID = 2 A
5 Pulse Test
4
3
2
100
7
5
4
3
2
10–1
–75
–25
25
75 125 175
Channel Temperature Tch (°C)
www.DataSheet4U.com
Gate to Source Cutoff Voltage vs.
Channel Temperature (Typical)
5.0
VDS = 10 V
ID = 1 mA
4.0
3.0
2.0
1.0
0–75 –25 25
75 125 175
Channel Temperature Tch (°C)
Transient Thermal Impedance vs. Pulse Width
101
7
5
3 D=1
2 0.5
100
0.2
7
5 0.1
0.05
3 0.02
2 0.01
10–1 Single pulse
PDM
D=
PW
T
PW
T
10–4 2 3 5710–3 2 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
Pulse Width PW (s)
Switching Time Measurement Circuit
Vin Monitor
RG
D.U.T.
Vout
Monitor
RL
VDD
Switching Waveform
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
Rev.2.00, Mar 14, 2006, page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK5003DPD.PDF ] | |
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