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Número de pieza | IRFH5250PBF | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRFH5250PbF
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
25
1.15
52
1.3
h100
V
m:
nC
:
A
HEXFET® Power MOSFET
PQFN 5X6 mm
Applications
• OR-ing MOSFET for 12V (typical) Bus in-Rush Current
• Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Low RDSon (<1.15 mΩ)
Low Thermal Resistance to PCB (<0.5°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5250TRPBF
IRFH5250TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
hContinuous Drain Current, VGS @ 10V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 8
www.irf.com
Max.
25
± 20
45
31
100
100
400
3.6
250
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
1
09/18/09
1 page 4
ID = 50A
3
2
TJ = 125°C
1
TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
IRFH5250PbFwww.DataSheet4U.com
2000
1800
1600
1400
ID
TOP 18A
24A
BOTTOM 50A
1200
1000
800
600
400
200
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
www.irf.com
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRFH5250PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFH5250PBF | HEXFET Power MOSFET | International Rectifier |
IRFH5250PBF | HEXFET Power MOSFET | International Rectifier |
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