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PDF RFUS20NS6S Data sheet ( Hoja de datos )
| Número de pieza | RFUS20NS6S | |
| Descripción | Super Fast Recovery Diode | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Super Fast Recovery Diode
RFUS20NS6S
Series
Ultra Fast Recovery
Dimensions(Unit : mm)
Applications
General rectification
Land size figure(Unit : mm)
Features
1)Ultra low switching loss
2)High current overload capacity
3)Cathode common single type
Construction
Silicon epitaxial planer
Taping dimensions (Unit : mm)
Structure
②
①③
Absolute maximum ratings(Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
VRM
VR
Average rectified forward current
Io
Forward current surge peak
Junction temperature
Storage temperature
IFSM
Tj
Tstg
Conditions
Duty0.5
Direct voltage
60Hz half sin wave resistive load ,
1/2 Io per diode
Tc=36C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
Limits
600
600
20
100
150
-55to+150
Unit
V
V
A
A
C
C
Electrical characteristics(Tj=25C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal resistance
Symbol
VF
IR
trr
Rth(j-c)
Conditions
IF=20A
VR=600V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
Min. Typ.
- 2.4
- 0.05
- 23
--
Max.
2.8
10
35
2
Unit
V
μA
ns
C/W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.A
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet RFUS20NS6S.PDF ] | |
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