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Número de pieza | RFU10TF6S | |
Descripción | Super Fast Recovery Diode | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RFU10TF6S (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Super Fast Recovery Diode
RFU10TF6S
Series
Ultra Fast Recovery
Dimentions(Unit : mm)
Applications
General rectification
Features
1)Single type.(TO-220)
2)Ultra High switching speed
Construction
Silicon epitaxial plnner
(1) (3)
www.DataSheet4U.com
Structure
(1) (3)
Absolute maximum ratings(Tc=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
Average rectified forward current
VRM
VR
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Conditions
Duty≦0.5
Direct voltage
60Hz half sin wave, Resistance load, Tc=50C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
Limits
600
600
10
100
150
-55 to +150
Unit
V
V
A
A
C
C
Electrical characteristics(Tj=25C)
Parameter
Symbol
Forward voltage
Reverse current
VF
IR
Reverse recovery time
trr
Thermal Resistance
Rth(j-c)
Conditions
IF=10A
VR=600V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
Min. Typ. Max. Unit
- 2.3 2.8 V
- 0.03 10 μA
- 16 25 ns
- - 3.5 C / W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.01 - Rev.A
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet RFU10TF6S.PDF ] |
Número de pieza | Descripción | Fabricantes |
RFU10TF6S | Super Fast Recovery Diode | ROHM Semiconductor |
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