(PDF) RF601B2D Datasheet - Fast Recovery Diodes

Número de pieza	RF601B2D
Descripción	Fast Recovery Diodes
Fabricantes	ROHM Semiconductor
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No Preview Available ! Fast recovery diodes RF601B2D zApplications General rectification zDimensions (Unit : mm) zFeatures 1)Power mold type.(CPD) 2)Ultra Low VF 3)Very fast recovery 4)Low switching loss zConstruction Silicon epitaxial planer z Taping dimensions (Unit : mm) www.DataSheet4U.com zLand size figure (Unit : mm) 6.0 1.6 1.6 zStructure CPD 2.3 2.3 zStructure (2) (1) (3) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (1) VRM VR Io 200 200 6 Forward current surge peak (60Hz/1cyc) Junction temperature IFSM Tj 40 150 Storage temperature Tstg -55 to +150 (1) Business frequencies, Rating of R-load, Tc=128°C, 1/2 Io per diode zElectrical characteristic (Ta=25°C) Parameter Symbol Min. Typ. Max. Forward voltage Reverse current Reverse recovery time VF - 0.87 0.93 IR - 0.01 10 trr - 14 25 Thermal impedance θjc - - 6 Unit V V A A °C °C Unit V µA ns °C/W Conditions IF=3A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR JUNCTION TO CASE www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.11 - Rev.F 1 page

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PDF RF601B2D Data sheet ( Hoja de datos )