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PDF RF1001T2 Data sheet ( Hoja de datos )
| Número de pieza | RF1001T2 | |
| Descripción | Fast Recovery Diode | |
| Fabricantes | ROHM Semiconductor | |
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Fast recovery diodes
RF1001T2D
Applications
General rectification
Features
1) Cathode common type.
(TO-220)
2) Ultra Low VF
3) Very fast recovery
4) Low switching loss
Construction
Silicon epitaxial planar
Dimensions (Unit : mm)
10.0±0.3
0.1
4.5±0.3
0.1
2.8±0.2
0.1
①
1.2
1.3
0.8
(1) (2) (3)
ROHM : ＴO220FN
① Manufacture Date
0.7±0.1
0.05
2.6±0.5
www.DataSheet4U.com
Structure
(1) (2) (3)
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
200
200
10
Forward current surge peak (60Hz/1cyc)
Junction temperature
IFSM
Tj
80
150
Storage temoerature
Tstg -55 to +150
(*1)Business frequencies, Rating of R-load, Tc=126C. 1/2 Io per diode
Electrical characteristic (Ta=25C)
Parameter
Forward voltage
Reverse current
Reverse recovery time
Thermal impedance
Symbol Min. Typ. Max.
VF - 0.87 0.93
IR - 0.01 10
trr - 15 30
j-c -
- 2.5
Unit
V
V
A
A
C
C
Unit
V
μA
ns
C/W
Conditions
IF=5A
VR=200V
IF=0.5A,IR=1A,Irr=0.25*IR
JUNCTION TO CASE
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet RF1001T2.PDF ] | |
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