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Número de pieza | RF071L4S | |
Descripción | Super Fast Recovery Diode | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
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Super Fast Recovery Diode
RF071L4S
Series
Standard Fast Recovery
Dimensions(Unit : mm)
Applications
General rectification
Features
1)Small power mold type.(PMDS)
2)high switching speed
3)Low forward voltage
Land size figure(Unit : mm)
2.0
PMDS
Structure
Construction
Taping dimensions(Unit : mm)
Silicon epitaxial planer
2.0±0.05
4.0±0.1
φ1.55±0.05
0.3
2.9±0.1
4.0±0.1
φ1.55
2.8MAX
Absolute maximum ratings (Tl=25C)
Parameter
Symbol
Repetitive peak reverse voltage
Reverse voltage
VRM
VR
Average rectified forward current
Io
Forward current surge peak
IFSM
Junction temperature
Storage temperature
Tj
Tstg
Conditions
Limits
D0.5
400
Direct voltage
400
Glass epoxy substrate mounted Tl=120C
1
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
15
150
-55to+150
Unit
V
V
A
A
C
C
Electrical characteristics(Tj=25C)
Parameter
Symbol
Forward voltage
VF
Reverse current
Reverse recovery time
Thermal resistance
IR
trr
Rth(j-l)
Conditions
IF=0.7A
VR=400V
IF=0.5A,IR=1A,Irr=0.25×IR
junction to lead
Min. Typ.
-1
- 0.01
- 20
--
Max.
1.25
10
25
23
Unit
V
μA
ns
C/W
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.02 - Rev.A
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet RF071L4S.PDF ] |
Número de pieza | Descripción | Fabricantes |
RF071L4S | Super Fast Recovery Diode | ROHM Semiconductor |
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