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PDF IRFH5207PBF Datasheet ( Hoja de datos )

Número de pieza IRFH5207PBF
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo

Total 8 Páginas
		
IRFH5207PBF Hoja de datos, Descripción, Manual
www.DataPShDee-t94U6.2co9m8
IRFH5207PbF
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
75 V
9.6 m
39 nC
1.7
71 A
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
HEXFET® Power MOSFET
PQFN 5X6 mm
Features and Benefits
Features
Low RDSon (< 9.6 m)
Low Thermal Resistance to PCB (< 1.2°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Benefits
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
results in Increased Power Density
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5207TRPBF
IRFH5207TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through … are on page 8
www.irf.com
Max.
75
± 20
13
11
71
45
285
3.6
105
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
1
04/12/10

1 page

IRFH5207PBF pdf
25
ID = 43A
20
15 TJ = 125°C
10
TJ = 25°C
5
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
IRFH5207PbFwww.DataSheet4U.com
400
350
TOP
ID
4.4A
300 11A
BOTTOM 43A
250
200
150
100
50
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
www.irf.com
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5

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