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Número de pieza | IRFH5106PBF | |
Descripción | HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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IRFH5106PbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
60 V
5.6 mΩ
50 nC
1.4 Ω
100 A
PQFN 5X6 mm
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features and Benefits
Features
Low RDSon (≤ 5.6mΩ)
Low Thermal Resistance to PCB (≤ 0.5°C/W)
100% Rg tested
Low Profile (≤ 0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Benefits
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
IRFH5106TRPBF
IRFH5106TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
1000
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes through are on page 8
www.irf.com
Max.
60
±20
21
17
100
63
400
3.6
114
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
1
03/12/10
1 page 14
ID = 50A
12
10
TJ = 125°C
8
6 TJ = 25°C
4
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
IRFH5106PbFwww.DataSheet4U.com
400
ID
TOP 6.1A
15A
300 BOTTOM 50A
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
www.irf.com
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRFH5106PBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFH5106PBF | HEXFET Power MOSFET | International Rectifier |
IRFH5106PBF | HEXFET Power MOSFET | International Rectifier |
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