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PDF IRFH5010PBF Datasheet ( Hoja de datos )

Número de pieza IRFH5010PBF
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo

Total 9 Páginas
		
IRFH5010PBF Hoja de datos, Descripción, Manual
IRFH5010PbF
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
100
9.0
67
1.2
h100
V
mΩ
nC
Ω
A
Applications
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Features and Benefits
Features
Low RDSon (< 9 mΩ)
Low Thermal Resistance to PCB (<0.5°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5010TRPBF
IRFH5010TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Notes  through † are on page 9.
Max.
100
± 20
13
11
h100
70
400
3.6
250
0.029
-55 to + 150
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
Units
V
A
W
W/°C
°C
May 19, 2015

1 page

IRFH5010PBF pdf
25
ID = 50A
20
TJ = 125°C
15
10
5 TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
IRFH5010PbF
1000
800
600
ID
TOP 5.4A
11.6A
BOTTOM 50A
400
200
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
May 19, 2015

5 Page



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