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PDF BA5956FM Data sheet ( Hoja de datos )
| Número de pieza | BA5956FM | |
| Descripción | Power Driver | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Structure
:
Product Name :
Device Name :
Silicon Monolithic Integrated Circuit
Power Driver For DVD Players
BA5956FM
www.DataSheet4U.com 1/5
Features
: • 2CHs for current driving-type BTL drivers to drive two-axis actuators
1CH for a voltage driving-type BTL driver for a feed motor
1CH for a voltage driving-type BTL driver for a loading motor
1CH for a voltage driving-type BTL driver for a spindle motor
• Use of the HSOP-M36 power package achieves downsizing of the set.
• A wide dynamic range
• A built-in thermal shutdown circuit installed.
• A built-in mute circuit installed. (This circuit can mute the outputs of the drivers
except for those for loading motors.)
• The power supplies for PreVcc, the actuator part, the loading part, and PowVcc
of the feed motor part/spindle motor part are provided independently to achieve
an efficient drive.
{ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
Parameter
Symbol
Power Supply
PreVcc ,
Voltage
PowVcc
Power Dissipation
Pd
Maximum Output
Current
Iomax
Operating
Temperature Range
Topr
Storage Temperature
Range
Tstg
Limits
18
2.2*1
1*2
-35 to 85
-55 to 150
Unit
V
W
A
°C
°C
*1 When mounted on the glass/epoxy board with the size: 70 mm×70 mm, the thickness: 1.6 mm, and
the rate of copper foil occupancy area: 3% or less.
Over Ta=25°C, derating at the rate of 17.6mW/°C.
*2 The power dissipation should be specified within the ASO range.
{ RECOMMENDED OPERATING CONDITIONS
(To determine a power supply voltage, the power dissipation must be taken into consideration.)
PreVcc
PowVcc
4.5 to 14 (V)
4.5 to PreVcc (V)
This product has not been checked for the strategic materials (or service) defined in the Foreign
Exchange and Foreign Trade Control Low of Japan so that a verification work is required before
exporting it.
Not designed for radiation resistance.
REV. A
1 page  
www.DataSheet4U.com 5/5
(16) This IC is a monolithic IC which has a P+ isolations and P substrate to isolate elements each other.
This P layer and an N layer in each element form a PN junction to construct various parasitic elements.
Due to the IC structure, the parasitic elements are inevitably created by the potential relationship.
Activation of the parasitic elements can cause interference between circuits and may result in a
malfunction or, consequently, a fatal damage. Therefore, make sure that the IC must not be used
under conditions that may activate the parasitic elements, for example, applying the lower voltage than
the ground level (GND, P substrate) to the input terminals.
In addition, do not apply the voltage to input terminals without applying the power supply voltage to the
IC. Also while applying the power supply voltage, the voltage of each input terminal must not be over
the power supply voltage, or within the guaranteed values in the electric characteristics.
<Supplemental Remarks>
Current feedback driver
The transfer gain (output current / input current) can be determined by the following equation:
gm
=
Rd
+
1
RWIRE
(A/V)
Where RWIRE represents a gold wire resistance inside the package, measuring approximately 0.075Ω
(±0.05Ω) (Typ.)
REV. A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BA5956FM.PDF ] | |
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