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PDF IRF6718L2TRPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF6718L2TRPBF | |
| Descripción | DirectFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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IRF6718L2TRPbFwww.DataShPeDet4U- .9co7m395B
l RoHS Compliant Containing No Lead and Bromide
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
l Very Low RDS(ON) for Reduced Conduction Losses
l Optimized for Active O-Ring / Efuse Applications
l Compatible with existing Surface Mount Techniques
IRF6718L2TR1PbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 0.50mΩ@10V 1.0mΩ@4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
64nC 20nC 9.4nC 67nC 50nC 1.9V
Applicable DirectFET Outline and Substrate Outline
S1 S2 SB
M2
M4
L6 DirectFET ISOMETRIC
L4 L6 L8
Description
The IRF6718L2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a D-pak. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems.
The IRF6718L2TRPbF has extremely low Si Rdson coupled with ultra low package resistance to minimize conduction losses. The
IRF6718L2TRPbF has been optimized for parameters that are critical in reliable operation on Active O-Ring / Efuse / hot swap applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
4
ID = 61A
3
2
1
TJ = 25°C
0
24
TJ = 125°C
68
10
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
Max.
25
±20
61
52
270
490
530
49
Units
V
A
mJ
A
14.0
12.0
10.0
8.0
ID= 49A
VDS= 20V
VDS= 13V
6.0
4.0
2.0
0.0
0
20 40 60 80 100 120 140 160 180
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.44mH, RG = 25Ω, IAS = 49A.
1
01/26/2010
1 page  
1000
TJ = 175°C
100 TJ = 25°C
TJ = -40°C
10
1
VGS = 0V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
70
60
50
40
30
20
10
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
400
300
TJ = 175°C
TJ = 25°C
200
IRF6718L2TR/TR1PbFwww.DataSheet4U.com
10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
100
1msec
10
10msec
DC
1 TA = 25°C
TJ = 175°C
Single Pulse
0.1
0.01 0.10
1.00 10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
ID = 150µA
1.0 ID = 250µA
ID = 1.0mA
0.5 ID = 1.0A
0.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
2400
2000
1600
ID
TOP 2.9A
4.6A
BOTTOM 49A
1200
100
2VDS = 10V
380µs PULSE WIDTH
800
400
0
0 20 40 60 80 100
ID,Drain-to-Source Current (A)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 14. Typ. Forward Transconductance vs. Drain Current Fig 15. Maximum Avalanche Energy vs. Drain Current
www.irf.com
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