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PDF PDTA114T Data sheet ( Hoja de datos )
| Número de pieza | PDTA114T | |
| Descripción | PNP resistor-equipped transistors | |
| Fabricantes | NXP Semiconductors | |
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PDTA114T series
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
Rev. 07 — 20 April 2007
Product data sheet
1. Product profile
1.1 General description
PNP Resistor-Equipped Transistors (RET) family in small plastic packages.
Table 1. Product overview
Type number
Package
NXP
PDTA114TE
SOT416
PDTA114TK
SOT346
PDTA114TM
SOT883
PDTA114TS[1]
SOT54
PDTA114TT
SOT23
PDTA114TU
SOT323
JEITA
SC-75
SC-59A
SC-101
SC-43A
-
SC-70
JEDEC
-
TO-236
-
TO-92
TO-236AB
-
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
NPN complement
PDTC114TE
PDTC114TK
PDTC114TM
PDTC114TS
PDTC114TT
PDTC114TU
1.2 Features
I 100 mA output current capability
I Built-in bias resistors
I Simplifies circuit design
I Reduces component count
I Reduces pick and place costs
1.3 Applications
I Digital applications
I Control of IC inputs
I Cost-saving alternative to BC857 series
in digital applications
I Low current peripheral driver
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
Conditions
open base
Min Typ Max Unit
- - −50 V
- - −100 mA
7 10 13 kΩ
1 page  
NXP Semiconductors
www.DataSheet4U.com
PDTA114T series
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base cut-off VCB = −50 V; IE = 0 A
-
-
−100 nA
current
ICEO
collector-emitter
VCE = −30 V; IB = 0 A
-
-
−1 µA
cut-off current
VCE = −30 V; IB = 0 A;
-
-
−50 µA
Tj = 150 °C
IEBO emitter-base cut-off VEB = −5 V; IC = 0 A
current
- - −100 nA
hFE
VCEsat
R1
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
VCE = −5 V; IC = −1 mA
IC = −10 mA;
IB = −0.5 mA
200 -
--
7 10
-
−150
mV
13 kΩ
Cc collector capacitance VCB = −10 V; IE = ie = 0 A; - - 3 pF
f = 1 MHz
600
hFE
400
200
006aaa554
(1)
(2)
(3)
−1
VCEsat
(V)
−10−1
(1)
(2)
(3)
006aaa555
0
−10−1
−1
−10 −102
IC (mA)
VCE = −5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
−10−2
−10−1
−1
−10 −102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
PDTA114T_SER_7
Product data sheet
Rev. 07 — 20 April 2007
© NXP B.V. 2007. All rights reserved.
5 of 11
5 Page 
NXP Semiconductors
www.DataSheet4U.com
PDTA114T series
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 8
10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
11.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12 Contact information. . . . . . . . . . . . . . . . . . . . . 10
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 April 2007
Document identifier: PDTA114T_SER_7
11 Page | ||
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