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PDF PDTA114E Data sheet ( Hoja de datos )
| Número de pieza | PDTA114E | |
| Descripción | PNP resistor-equipped transistors | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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DATA SHEET
PDTA114E series
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
Product data sheet
Supersedes data of 2003 Apr 10
2004 Aug 02
1 page  
NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
www.DataSheet4U.com
Product data sheet
PDTA114E series
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
ICEO
IEBO
hFE
VCEsat
Vi(off)
Vi(on)
R1
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
VCB = −50 V; IE = 0
VCE = −30 V; IB = 0
VCE = −30 V; IB = 0; Tj = 150 °C
VEB = −5 V; IC = 0
VCE = −5 V; IC = −5 mA
IC = −10 mA; IB = −0.5 mA
IC = −100 μA; VCE = −5 V
IC = −10 mA; VCE = −0.3 V
−
−
−
−
30
−
−
−2.5
7
−
−
−
−
−
−
−1.1
−1.8
10
−100
−1
−50
−400
−
−150
−0.8
−
13
nA
μA
μA
μA
mV
V
V
kΩ
R-----2--
R1
resistor ratio
0.8 1
1.2
Cc collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz − − 3 pF
2004 Aug 02
5
5 Page 
NXP Semiconductors
PNP resistor-equipped transistors;
R1 = 10 kΩ, R2 = 10 kΩ
Plastic surface-mounted package; 3 leads
www.DataSheet4U.com
Product data sheet
PDTA114E series
SOT23
DB
E AX
3
1
e1 bp
e
2
wM B
HE v M A
A
A1
Q
detail X
Lp
c
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
mm
1.1
0.9
0.1
0.48 0.15
0.38 0.09
3.0
2.8
E
1.4
1.2
e
e1 HE Lp
Q
v
1.9
0.95
2.5
2.1
0.45 0.55
0.15 0.45
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
JEITA
TO-236AB
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Aug 02
11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet PDTA114E.PDF ] | |
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