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Número de pieza | PBSS9110Z | |
Descripción | 1A PNP low VCEsat (BISS) transistor | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! PBSS9110Z
100 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 03 — 11 December 2009
www.DataSheet4U.com
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)
small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS8110Z.
1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
High-voltage DC-to-DC conversion
High-voltage MOSFET gate driving
High-voltage motor control
High-voltage power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCEO collector-emitter voltage
IC collector current
ICM peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp ≤ 1 ms
IC = −1 A;
IB = −100 mA
Min Typ Max
Unit
- - −100 V
- - −1 A
- - −3 A
[1] -
170 320
mΩ
1 page NXP Semiconductors
PBSS9110Zwww.DataSheet4U.com
100 V, 1 A PNP low VCEsat (BISS) transistor
103
Zth(j-a)
(K/W)
102
10
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa821
10−1
10−5
10−4
10−3
10−2
10−1
1
10 102 103
tp (s)
FR4 PCB, mounting pad for collector 6cm2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS9110Z_3
Product data sheet
Rev. 03 — 11 December 2009
© NXP B.V. 2009. All rights reserved.
5 of 14
5 Page NXP Semiconductors
11. Soldering
PBSS9110Zwww.DataSheet4U.com
100 V, 1 A PNP low VCEsat (BISS) transistor
1.3 1.2
(4×) (4×)
7
3.85
3.6
3.5
0.3
4
3.9 6.1 7.65
1 23
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
2.3
1.2
(3×)
1.3
(3×)
6.15
2.3
Fig 16. Reflow soldering footprint SOT223 (SC-73)
8.9
6.7
PBSS9110Z_3
Product data sheet
1.9
4
6.2 8.7
1 23
1.9
(3×)
2.7 2.7
1.1
1.9
(2×)
Fig 17. Wave soldering footprint SOT223 (SC-73)
Rev. 03 — 11 December 2009
sot223_fr
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport
direction during soldering
sot223_fw
© NXP B.V. 2009. All rights reserved.
11 of 14
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet PBSS9110Z.PDF ] |
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PBSS9110T | PNP low VCEsat (BISS) transistor | NXP Semiconductors |
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