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PDF ZXMS6005DG Data sheet ( Hoja de datos )

Número de pieza ZXMS6005DG
Descripción 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
Fabricantes Diodes 
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No Preview Available ! ZXMS6005DG Hoja de datos, Descripción, Manual

A Product Line of
www.DataSheet4U.com
Diodes Incorporated
ZXMS6005DG
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFETMOSFET
SUMMARY
Continuous drain source voltage 60 V
On-state resistance
200 mΩ
Nominal load current (VIN = 5V) 2 A
Clamping Energy
490 mJ
SOT223 Package
DESCRIPTION
The ZXMS6005DG is a self protected low side MOSFET with logic
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6005DG is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
D
S
D
IN
FEATURES
Compact high power dissipation package
Low input current
Logic Level Input (3.3V and 5V)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input Protection (ESD)
High continuous current rating
ORDERING INFORMATION
DEVICE
PART
MARK
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY PER
REEL
ZXMS6005DGTA
ZXMS
6005D
7
12 embossed
1,000 units
ZXMS6005DG
Document Number DS32247 Rev. 1 - 2
1 of 9
www.diodes.com
June 2010
© Diodes Incorporated

1 page




ZXMS6005DG pdf
A Product Line of
www.DataSheet4U.com
Diodes Incorporated
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN TYP MAX UNIT CONDITIONS
Static Characteristics
Drain-Source Clamp Voltage
Off state Drain Current
Off state Drain Current
Input Threshold Voltage
Input Current
Input Current
Input Current while over
temperature active
Static Drain-Source On-State
Resistance
VDS(AZ)
IDSS
IDSS
VIN(th)
IIN
IIN
RDS(on)
60 65 70
1
2
0.7 1
1.5
60 100
120 200
300
170 250
V ID=10mA
µA VDS=12V, VIN=0V
uA VDS=36V, VIN=0V
V VDS=VGS, ID=1mA
μA VIN=+3V
μA VIN=+5V
μA VIN=+5V
mΩ VIN=+3V, ID=1A
Static Drain-Source On-State
Resistance
RDS(on)
150 200
mΩ VIN=+5V, ID=1A
Continuous Drain Current (a)
Continuous Drain Current (a)
Continuous Drain Current (b)
Continuous Drain Current (b)
Current Limit (d)
Current Limit (d)
Dynamic Characteristics
Turn On Delay Time
Rise time
Turn Off Delay Time
Fall Time
ID
ID
ID
ID
ID(LIM)
ID(LIM)
td(on)
tr
td(off)
ff
1.4
1.6
1.9
2.0
2.2 5
3.3 7
6
14
34
19
A VIN=3V; TA=25°C
A VIN=5V; TA=25°C
A VIN=3V; TA=25°C
A VIN=5V; TA=25°C
A VIN=+3V,
A VIN=+5V
μs VDD=12V, ID=1A,
VGS=5V
μs
μs
μs
Notes:
(d) The drain current is restricted only when the device is in saturation (see graph ‘typical output
characteristic’). This allows the device to be used in the fully on state without interference from the
current limit. The device is fully protected at all drain currents, as the low power dissipation
generated outside saturation makes current limit unnecessary.
ZXMS6005DG
Document Number DS32247 Rev. 1 - 2
5 of 9
www.diodes.com
June 2010
© Diodes Incorporated

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