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PDF IRFH5301PBF Data sheet ( Hoja de datos )
| Número de pieza | IRFH5301PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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www.DataPShDee-t94U6.2co7m6
IRFH5301PbF
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
(@Tc(Bottom) = 25°C)
30
1.85
37
1.5
100h
V
mΩ
nC
Ω
A
Applications
• OR-ing MOSFET for 12V (typical) Bus in-Rush Current
• Synchronous MOSFET for Buck Converters
• Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features
Low RDSon (<1.85mΩ)
Low Thermal Resistance to PCB (<1.1°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
HEXFET® Power MOSFET
PQFN 5X6 mm
Benefits
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
IRFH5301TRPBF
IRFH5301TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Notes through are on page 8
www.irf.com
Max.
30
± 20
35
28
h100
h100
400
3.6
110
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
1
11/18/09
1 page  
6
ID = 50A
5
4
3
TJ = 125°C
2
1 TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
IRFH5301PbFwww.DataSheet4U.com
700
ID
600 TOP 9.69A
18.4A
500 BOTTOM 50A
400
300
200
100
0
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy vs. Drain Current
15V
VDS
L
RG
20V
tp
D.U.T
IAS
0.01Ω
DRIVER
+
-
VDD
A
Fig 14a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
IAS
Fig 14b. Unclamped Inductive Waveforms
VDS
VGS
RG
RD
D.U.T.
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
+-VDD
Fig 15a. Switching Time Test Circuit
www.irf.com
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 15b. Switching Time Waveforms
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFH5301PBF.PDF ] | |
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